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N-rich GaNAs with High As Content Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  01 February 2011

Akitaka Kimura ,
H. F. Tang ,
C. A. Paulson  and
T. F. Kuech
Akitaka Kimura
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
H. F. Tang
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
C. A. Paulson
Affiliation:
Department of Electrical and Computer Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
T. F. Kuech
Affiliation:
Department of Chemical and Biological Engineering, The University of Wisconsin-Madison, Madison, WI 53706–1691, USA
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Abstract

GaN1-yAsy epitaxial alloys on the N-rich side with high As content were grown by metalorganic vapor phase epitaxy. They had specular surfaces and the single-phase epitaxial nature was confirmed by X-ray diffraction. The As incorporation increased through both a decrease in the growth temperature and V/III ratio. These trends were similar to that found in other III-V alloy systems which exhibit a large miscibility gap and the anion incorporation was considered to have been limited kinetically under the conditions of the low V/III ratio. The range of achieved As content was extended up to y=0.067, which is a composition well within the miscibility gap. The As-content dependence of the band gap energy was determined by optical absorption measurements and large bowing parameter of 16.8 ± 0.9 eV was determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.10
Copyright
Copyright © Materials Research Society 2004

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References

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