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Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)

Published online by Cambridge University Press:  01 February 2011

Youngki Hong ,
Udaya B. Patri ,
Suresh Ramakrishnan  and
S.V. Babu
Youngki Hong
Affiliation:
Interdisciplinary Engineering Science, Clarkson University, Potsdam, New York 13699
Udaya B. Patri
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
Suresh Ramakrishnan
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
S.V. Babu
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699 Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
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Abstract

In this study, the interaction between several kinds of surfactants and copper surface was examined to control the dissolution of copper during CMP. Among those surfactants, sodium dodecylsulfate (SDS), one of the conventional anionic surfactants, showed effective interaction with copper and significantly suppressed the dissolution of the copper at acidic and neutral pH ranges in a model copper CMP slurry system consisting of 3 wt% fumed silica, 1 wt% glycine, and 5 wt% hydrogen peroxide in deionized water. The inhibition performance of copper dissolution by SDS is better than that of Benzotriazole (BTA), a conventional inhibiting agent of copper dissolution in a copper CMP slurry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 867: Symposium W – Chemical-Mechanical zPlanarization-Integration, Technology and Reliability , 2005 , W1.10
Copyright
Copyright © Materials Research Society 2005

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