Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-25T22:41:07.463Z Has data issue: false hasContentIssue false

Novel Tungsten Carbide Nanocrystalline Composites by Pulsed Laser Deposition

Published online by Cambridge University Press:  14 March 2011

Ravi K. Venkatesan
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916, USA
A. Kvit
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916, USA
Q. Wei
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916, USA
J. Narayan
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695-7916, USA
Get access

Abstract

We have developed a novel processing technique to fabricate “artifact free” tungsten carbide (WC) nanocomposites. In this method, pulsed laser deposition of WC in conjunction with a few monolayers of nickel aluminide (NiAl) is used to control the grain size of nanocrystalline composites. The grain size of WC was controlled by the thickness of tungsten carbide and the substrate temperature. The role of NiAl is to ensure the nucleation of tungsten carbide islands, and it is also insoluble in WC. Using this approach, we have fabricated nanocomposites of grain sizes ranging from 6 nm to 35 nm. The hardness of the composite increases with the decrease in grain size, following approximately Hall-Petch relationship. The role of NiAl in grain boundary deformation is of particular interest in strengthening the nanocrystalline composites. The potential of this technique to go to even lower grain sizes is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Narayan, J., Chen, Y. and Moon, R.M., Phys. Rev. Lett. 46, 1491(1981)Google Scholar
2. Narayan, J. and Chen, Y., Phil. Mag. A49, 475(1984); U.S. Patent #4,376,455(March 15,1983)Google Scholar
3. Narayan, J., Chen, Y. and Tsang, K.L., Phil. Mag. A55, 807(1987)Google Scholar
4. , Suryanarayana, C International Materials Review, vol. 40 No.2, (1995), 41 Google Scholar
5. Siegel, R.W., Ann. Rev. Materials Science, 21, 559(1991)Google Scholar
6. Armstrong, R., Codd, I., Douthwaite, R.M. and Petch, N.J., Phil. Mag. 7, 45(1962)Google Scholar
7. Scattergood, R.O. and Koch, C.C., Script. Met. 27, 1195(1992)Google Scholar
8. Vitos, L., Ruban, A.V., Shriver, H.L. and Knollar, J., Surface Science 411, 186(1998)Google Scholar
9. Conrad, H. and Narayan, J., Scripta Mat(2000)Google Scholar
10. Narayan, J., J.Nanoparticle Research 10, 16(2000)Google Scholar
11. , Sanders-PG et al. , Nanostructured-materials. Vol. 8, no. 3; May-June 1997; 243–52Google Scholar
12. Nieman, G.W., Weertman, J.R. and Siegel, R.W., J.Materials Research, 6, 1012(1995)Google Scholar
13. Riester, L., Ferber, M., Weertman, J.R. & Siegel, R.W., Materials Science & Engineering. A 204, 1(1995)Google Scholar