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A Novel Theoretical Model for Semiconductor Oxide Gas Sensor

Published online by Cambridge University Press:  01 February 2011

Satyajit Shukla  and
Sudipta Seal
Satyajit Shukla
Affiliation:
University of Central Florida (UCF), Mechanical Materials Aerospace Engineering (MMAE) Department andAdvanced Materials Processing and Analysis Center (AMPAC), Engineering # 381, 4000 Central Florida Blvd., Orlando, FL 32816, Phone: (407) 823–5227, Fax: (407) 823–0208 E-mail(s): sshukla@pegasus.cc.ucf.edu, sseal@pegasus.cc.ucf.edu
Sudipta Seal*
Affiliation:
University of Central Florida (UCF), Mechanical Materials Aerospace Engineering (MMAE) Department andAdvanced Materials Processing and Analysis Center (AMPAC), Engineering # 381, 4000 Central Florida Blvd., Orlando, FL 32816, Phone: (407) 823–5227, Fax: (407) 823–0208 E-mail(s): sshukla@pegasus.cc.ucf.edu, sseal@pegasus.cc.ucf.edu
*
*To whom the correspondence should be addressed.
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Abstract

A new constitutive equation for the gas sensitivity of n-type semiconductor oxide thin film gas sensor has been proposed here based on a single-crystal model. The derived constitutive equation shows the dependence of the gas sensitivity on various critical parameters such as nanocrystallite size, space-charge-layer thickness, reducing gas concentration, bulk charge-carrier-concentration, surface-density of states, oxygen-ion-vacancy concentration, operating temperature, and film thickness. The present theoretical model is applicable to all n-type semiconductor oxides gas sensors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A4.2
Copyright
Copyright © Materials Research Society 2005

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References

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