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Novel in-situ Ion Bombardment Process for A Thermally Stable (> 800 °C) Plasma Deposited Dielectric

Published online by Cambridge University Press:  10 February 2011

F. Ren ,
J. R. Lothian ,
S. J. Pearton ,
R. G. Wilson ,
J. R. LaRoche ,
J. W. Lee ,
D. Johnson  and
J. M. Zavada
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J. R. Lothian
Affiliation:
Multiplex Inc., South Plainfield, NJ 07080
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
R. G. Wilson
Affiliation:
Charles Evans and Associates, Sunnyvale, CA 94086
J. R. LaRoche
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611
J. W. Lee
Affiliation:
Plasma Therm inc., St. Petersburg, FL 33716
D. Johnson
Affiliation:
Plasma Therm inc., St. Petersburg, FL 33716
J. M. Zavada
Affiliation:
US Army Research Office, Research Triangle Pk, NC27709
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Abstract

We demonstrated an in-situ dielectric film passivation technique by dividing a thick film deposition into many thin film (<40Å) depositions and incorporating the ion bombardment between the depositions. N2 was used for the plasma treatment to passivate the SiNx film and a well passivated and thermally stable SiNx was achieved with this process. The refractive index of N2 treated SiNx film only changed 0.3% when the SiNx film was heated up to 1000 °C and the film with a continuous deposition showed a 2.5% change. From the results of SIMS analysis, the N2 treated SiNx film showed a excellent thermal stability after heat up to 1000 °C. The etch rates of passivated SiNx film in BOE and diluted HF are ≤40 Å/min which is much slower than that of un-treated SiNx (135 Å/min).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 573: Symposium Z – Compound Semiconductor Surface Passivation and Novel Device.. , 1999 , 183
Copyright
Copyright © Materials Research Society 1999

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References

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