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A Novel InSb Photodiode Infrared Sensor Operating at Room Temperature

Published online by Cambridge University Press:  01 February 2011

Koichiro Ueno ,
Edson Gomes Camargo ,
Yoshifumi Kawakami ,
Yoshitaka Moriyasu ,
Kazuhiro Nagase  and
Naohiro Kuze
Koichiro Ueno
Affiliation:
ueno.kh@om.asahi-kasei.co.jp, Asahi Kasei Corporation, Central R&D Laboratories, 2-1 Samejima, Fuji, N/A, N/A, Japan
Edson Gomes Camargo
Affiliation:
camargo.eb@om.asahi-kasei.co.jp, Brazil
Yoshifumi Kawakami
Affiliation:
kawakami.yd@om.asahi-kasei.co.jp, Japan
Yoshitaka Moriyasu
Affiliation:
moriyasu.yb@om.asahi-kasei.co.jp, Japan
Kazuhiro Nagase
Affiliation:
nagase.kb@om.asahi-kasei.co.jp, Japan
Naohiro Kuze
Affiliation:
kuze.nb@om.asahi-kasei.co.jp, Japan
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Abstract

A microchip-sized InSb photodiode based infrared sensor (InSb PDS) that operates at room temperature was developed. The InSb PDS consists of 700 photodiodes connected in series and consumes no power, because it works in photovoltaic mode to output an open-circuit voltage. The InSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 μV/Hz1/2. A detectivity of 2.8×108 cmHz1/2/W was obtained at 300 K. The InSb PDS has performance high enough for applications such as mobile electronic equipment, personal computers, and consumer electronics

Keywords

molecular beam epitaxy (MBE)photovoltaicsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 891: Symposium EE – Progress in Semiconductor Materials V – Novel Materials and Electronics and Optoelectronic Applications , 2005 , 0891-EE06-03
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

1. Kim, J., Kim, S., Wu, D., Wojkowski, J., Xu, J., Piotrowski, J., Bigan, E. and Razeghi, M., Appl. Phys. Lett. 67, 2645 (1995).Google Scholar
2. Razeghi, M., Opto-Electronics Review 6 (3), 155 (1998).Google Scholar
3. Kim, J. D. and Razeghi, M., Opto-Electronics Review 6 (3), 217 (1998).Google Scholar
4. Ashley, T., Dean, A. B., Elliott, C. T., McConville, C. F., Pryce, G. J. and Whitehouse, C. R., Appl. Phys. Lett. 59, 1761 (1991).Google Scholar
5. Elliott, C. T., Gordon, N. T., Hall, R. S., Phillips, T. J., Jones, C. L. and Best, A., Journal of Electronic Materials, 26, No. 6, 643 (1997).Google Scholar
6. Piotrowski, J. and Gawron, W., Infrared Physics & Technology, 36, 1045 (1995).Google Scholar
7. Kuze, N., Camargo, E. G., Ueno, K., Kawakami, Y., Moriyasu, Y., Nagase, K., Sato, M., Ishibashi, K. and Ozaki, M., Phys. stat. sol. (c), (2006), to be published.Google Scholar