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A Novel Four Terminal Poly-Si Tft Suppressing Kink and Improving Reliability

Published online by Cambridge University Press:  10 February 2011

Cheol-Min Park ,
Ji-Hoon Kang ,
Kee-Chan Park  and
Min-Koo Han
Cheol-Min Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
Ji-Hoon Kang
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
Kee-Chan Park
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of EE, Seoul National University, Kwanak-ku, Seoul 151-742, Korea
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Abstract

We fabricated a new device, which employs counter-doped lateral body terminal (CLBT) in order to suppress kink effects and improve the device stability. Proposed device also employs a buried channel (BC), which increases ON-current and operating frequency. Although LDD structure is not employed in the proposed device, low OFF-current is successfully obtained due to elimination of minority carrier through CLBT. We have measured the dynamic properties of poly-Si TFT device and circuit. The reliability of TFT and circuits after AC stress is also discussed in our paper.

The proposed poly-Si TFT has high ON-current and low OFF-current compared with conventional 3-terminal poly-Si TFT. The 4-terminal device characteristics were measured with source and CLBT shorted. The proposed device exhibits superior performance to conventional device in ON-current because BC prevents carrier scattering to gate oxide. We have performed bias and high temperature stress test of ring oscillator in order to investigate dynamic reliability between conventional poly-Si TFT and proposed 4-terminal poly-Si TFT. Our experimental results show that BC enables the device to have high mobility and switching frequency (33MHz at VDD=15V). The minority carrier elimination of CLBT suppresses kink effects and makes superb dynamic reliability of CMOS circuit.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 357
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Tanaka, K., Arai, H., and Kohda, S., IEEE Electron Device Letters, vol. 9, no. 1, pp. 23–25, 1988.Google Scholar
2. Min, B.H., Park, C.M., and Han, M.K., IEEE Electron Device Letters, vol. 17, No.12, pp.560–562, 1996.Google Scholar
3. Tol, M.J. Van der and Chamberlain, S. G., IEEE Trans. on Electron Devices, vol. 40, no. 4, pp. 741–749, 1993.Google Scholar
4. Fripp, A. L., J. Appl. Phys., vol.46, no.3, p.1240–1244, 1975.Google Scholar
5. Yoo, J. S., Kim, C. H., Park, K. C., and Han, M. K., Conf. Rec. of International Display Research Conference, p.183, 1997.Google Scholar