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Novel Epoxy Siloxane Polymer as Low-K Dielectric

Published online by Cambridge University Press:  17 March 2011

Pei-I Wang ,
Jasbir S. Juneja ,
Shyam Murarka ,
Toh –Ming Lu ,
Ram Ghoshal  and
Rajat Ghoshal
Pei-I Wang
Affiliation:
Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
Jasbir S. Juneja
Affiliation:
Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
Shyam Murarka
Affiliation:
Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
Toh –Ming Lu
Affiliation:
Center of Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY
Ram Ghoshal
Affiliation:
Polyset Co. Inc., Mechanicville, NY
Rajat Ghoshal
Affiliation:
Polyset Co. Inc., Mechanicville, NY
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Abstract

This paper introduces a low-k dielectric material, a novel epoxy siloxanepolymer, made by Polyset Co. Inc, which has promising properties. Thepolymer was spin-deposited, and thickness and optical properties weremeasured using variable-angle spectroscopic ellipsometry (VASE). Fouriertransform infrared (FTIR) spectra of as deposited and cured polymers showedthat the polymer is fully cured at 165 °C. The low curing temperature of thepolymer lowers stress in back-end-of-line (BEOL) stack and thus improves thereliability. The polymer is thermally stable up to 400 °C. The polymer hasYoung's modulus of ∼5 GPa and hardness of greater than 0.4 GPa. Aftermultiple stress cycles up to 300 °C, the residual stress in the polymer atroom temperature is less than 60 Mpa. The polymer has good adhesion withsemiconductor and dielectrics such as Si, SiC, and SiO2, metalssuch as Al, Cu, Co, and W, and barrier materials such as TaN. The bulkdielectric constant of the polymer is 2.4 - 2.7. The leakage current densityin the polymer at the applied electrical field of 1 MV/cm is in 10−9 A/cm2 range and the breakdown field of thepolymer is ranging from 5 to 7 MV/cm. The polymer when subjected tobias-temperature stress (BTS) conditions of 150 °C and 0.5 MV/cm shows noC-V shift for up to 100 min indicating that the polymer resists Copperdiffusion. The current density under stress conditions of 150 °C and 0.5MV/cm was less than 10−9 A/cm2 for up to 7 hrs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 812: Symposium F – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2004 , 2004 , F4.4
Copyright
Copyright © Materials Research Society 2004

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