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Novel Electromigration Failure Mechanism for Aluminium-Based Metallization on Titanium Substrate

Published online by Cambridge University Press:  10 February 2011

G. Girardi ,
C. Caprile ,
F. Cazzaniga  and
L. Riva
G. Girardi
Affiliation:
SGS-THOMSON Microelectronic Central R&D, Agrate Brianza, Italy
C. Caprile
Affiliation:
SGS-THOMSON Microelectronic Central R&D, Agrate Brianza, Italy
F. Cazzaniga
Affiliation:
SGS-THOMSON Microelectronic Central R&D, Agrate Brianza, Italy
L. Riva
Affiliation:
SGS-THOMSON Microelectronic Central R&D, Agrate Brianza, Italy
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Abstract

In this paper a phenomenological characterisation of an anomalous grain growth, observed after classical electromigration lifetests, on Al-l%Si-0.5%Cu multigrain stripes, deposited at high temperature (460°C) on a Ti substrate, is reported. Failure analysis, carried out by Scanning Electron Microscopy (SEM) and Focus Ion Beam (FIB), has detected an abnormal single-grain growth in the vertical direction, starting from the Ti/Al interface. Medium Time to Failure (MTF) data are compared with those of stripes on Ti/TiN substrate, on which no grain growth was observed. The growth of the anomalous grains has been related to the Ti/Al interface properties. Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) analyses concurrently show a higher texture of the film on the Ti, compared with the film on the Ti/TiN substrate. The tight columnar orientation of grain boundaries strongly limits the mechanism of grain boundary diffusion during electromigration stress. The atomic flux is then forced to take place at the Ti/Al interface, where the epitaxial growth of the Al single grains is favoured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 516: Symposium E – Low Dielectric Constant Materials IV , January 1998 , 59
Copyright
Copyright © Materials Research Society 1998

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References

1. Attardo, M.J., Rosenberg, R., J. Appl. Phys. 41(6), p. 2381 (1970)10.1063/1.1659233Google Scholar
2. Vaidya, S., Fraser, D.B., Sinha, A.K., Proceedings of the 18th IEEE International Reliability Physics Symposium, p. 165 (1980)Google Scholar
3. Rodbell, K.P., DeHaven, P.W., Mis, J.D., Mater. Res. Soc. Symp. Proc. 225, p. 91 (1991)Google Scholar
4. Sheng, T.T., Goh, G.P., Tung, C.H., Wang, L.F., J. Vac. Sci. Technol. B 15 (3), p. 610 May/Jun (1997)10.1116/1.589301Google Scholar
5. Scorzoni, A., Neri, B., Caprile, C., Fantini, F., Mat. Sci. Rep. 7 (4/5), p. 143 Dec (1991)10.1016/0920-2307(91)90005-8Google Scholar
6. Besser, P., Sanchez, J.E. Jr., Kraft, O., Mater. Res. Soc. Tutorial Symp. J, p. 88–126 (1997)Google Scholar
7. Knorr, D.B., Mater. Res. Soc. Symp. Proc. 309, p. 75 (1993)10.1557/PROC-309-75Google Scholar
8. Cazzaniga, F., Riva, L., Queirolo, G., in Advanced Metallization and Interconnect System for ULSI Applications in 1996, edit by Havemann, R., Schmitz, J., Komiyama, H., Tsubouchi, K. (Mater. Res. Soc. Conf. Proc. ULSI XII, Boston, MA, 1996) p. 135 Google Scholar