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Nonlinear Optical Properties of Ultranarrow P-Type Gaas Quantum Wells
Published online by Cambridge University Press: 21 February 2011
Abstract
We have performed second harmonic generation (SHG) measurements in the 3-5 μm region on p-type stepped quantum wells (QWs) using the tunable, high peak power pulses generated by a free electron laser. The samples were grown by MBE on (100) GaAs wafers. The asymmetric QWs are made of m monolayers of GaAs and n monolayers of Al0.5Ga0.5As sandwiched between AlAs barriers. The QWs were characterized by x-ray diffraction and room temperature photoluminescence (PL). We measured an order of magnitude enhancement of the second order susceptibility over bulk GaAs. In contrast to n-type QWs, the dominant component is the χ(2)xyz component. The results are explained by a full pseudopotential band structure calculation of χ(2).
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- Copyright © Materials Research Society 1994