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Nonlinear Optical Properties of Ultranarrow P-Type Gaas Quantum Wells

Published online by Cambridge University Press:  21 February 2011

Z. Xu
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
J. V. Vandyshev
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
G. W. Wicks
Affiliation:
The Institute of Optics, University of Rochester, Rochester, NY 14627
M. J. Shaw
Affiliation:
Department of Physics, The University of Newcastle upon Tyne, Newcastle, UK
M. Jaros
Affiliation:
Department of Physics, The University of Newcastle upon Tyne, Newcastle, UK
B. Richman
Affiliation:
W. W. Hansen Laboratory of Physics, Stanford University, Stanford, CA 94305
C. Rella
Affiliation:
W. W. Hansen Laboratory of Physics, Stanford University, Stanford, CA 94305
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Abstract

We have performed second harmonic generation (SHG) measurements in the 3-5 μm region on p-type stepped quantum wells (QWs) using the tunable, high peak power pulses generated by a free electron laser. The samples were grown by MBE on (100) GaAs wafers. The asymmetric QWs are made of m monolayers of GaAs and n monolayers of Al0.5Ga0.5As sandwiched between AlAs barriers. The QWs were characterized by x-ray diffraction and room temperature photoluminescence (PL). We measured an order of magnitude enhancement of the second order susceptibility over bulk GaAs. In contrast to n-type QWs, the dominant component is the χ(2)xyz component. The results are explained by a full pseudopotential band structure calculation of χ(2).

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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