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Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Y. Gong ,
Y. Gu ,
Igor L. Kuskovsky ,
G. F. Neumark ,
J. Li ,
J. Y. Lin ,
H. X. Jiang  and
I. Ferguson
Y. Gong
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, U.S.A.
Y. Gu
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, U.S.A.
Igor L. Kuskovsky
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, U.S.A.
G. F. Neumark
Affiliation:
Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, U.S.A.
J. Li
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506, U.S.A.
J. Y. Lin
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506, U.S.A.
H. X. Jiang
Affiliation:
Department of Physics, Kansas State University, Manhattan, KS 66506, U.S.A.
I. Ferguson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332–0250, U.S.A.
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Abstract

It is shown that the high p-type conductivity in GaN:Mg, grown by metal-organic chemical vapor deposition followed by post-growth annealing, is due to non-equilibrium acceptor concentrations. A series of samples cut from a single GaN:Mg wafer, which initially had undergone rapid thermal annealing (RTA) after growth, has been investigated. The samples were annealed at various temperatures in nitrogen ambient for over 12 hours, and temperature-dependent Hall effect measurements were performed. For samples annealed at temperatures higher than 850 °C, the hole concentrations decrease by at least an order of magnitude, compared with the original sample. This behavior is explained by an Mg acceptor concentration in excess of its equilibrium solubility limit in the original sample; thus, at high enough temperatures, in the absence of hydrogen, Mg acceptors diffuse either to form electrically inactive precipitates or are eliminated. It is worth noting that the acceptor activation energy remains the same for all samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.16
Copyright
Copyright © Materials Research Society 2004

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