Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-01T13:25:13.329Z Has data issue: false hasContentIssue false
  • English
  • Français

Noncontact Photoconductivity Amplitude Technique to Characterize Polishing- and Slicing-Induced Residual Damage in Si Wafers

Published online by Cambridge University Press:  26 February 2011

Y. Ogita ,
M. Nakano  and
H. Masumura
Y. Ogita
Affiliation:
Kanagawa Institute of Technology, Department of Electrical and Electronic Engineering, Atsugi, Kanagawa, 243–02, Japan
M. Nakano
Affiliation:
Shin-Etsu Handotai Co., Ltd., Shirakawa Lab., Nishi-shirakawa, Fukushima 961, Japan
H. Masumura
Affiliation:
Shin-Etsu Handotai Co., Ltd., Shirakawa Lab., Nishi-shirakawa, Fukushima 961, Japan
Get access

Abstract

The photoconductivity amplitude (PCA) technique with UV laser carrier excitation has been proposed to characterize surface property and subsurface damage. Combining this new technique with mechanochemical polishing has determined the depth profile of the slicing-induced residual damage. Combining SC1 cleaning with this technique allows to determine the depth profile of residual damage induced by mirror polishing. This result leads that the mirror polishing-induced damage can be removed by the SC1 cleaning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 591
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lundt, , Kerstan, N., Huber, A. and Hahn, P. O., in Semiconductor silicon/1994, edited by Huff, H. R., Bergholz, W. and Sumino, K. (The electrochemical Society, Pennington, NJ, 1994) pp.218–225 Google Scholar
2. Abe, T., Itoh, T., Hayamizu, Y., Yokota, S. and Yamagishi, H., in Defect Control in Semiconductors, edited by Sumino, K. (North-Holland, Amsterdam, 1990) pp.297–303 Google Scholar
3. Ogita, Y., Semicond. Sci. Tech., 7, 1, A175–A179 (1992)Google Scholar
4. Ogita, Y., Yakushiji, K. and Tate, N., in Defect Recognition and Image Processing in Semiconductors and Devices, edited by Jimenez, J. (Institute of Physics, Bristol, UK, 1994) pp. 39–43 Google Scholar
5. Ogita, Y., Yakushiji, K. and Tate, N.in Semiconductor silicon/1994, edited by Huff, H. R., Bergholz, W. and Sumino, K. (The Electrochemical Society, Pennington, NJ 1994) pp. 1083–1092 Google Scholar
6. Ogita, Y., Shinbu, K., Katoh, T., Ishihara, M. and Hirai, T., The Japan Soc. of Appl. Phys. and Related Soc, Extended Abs., (1994 Spring), No.2, P.685 (29a-ZK-2)Google Scholar
7. Sumie, S., Takamatsu, H, Tsunaki, H., Nishimoto, Y. and Nakai, Y., Mat. Res. Soc. Symp. Proc., Vol. 236, (1992), pp. 241–246 Google Scholar