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Nominal PbSe nano-islands on PbTe: grown by MBE, analyzed by AFM and TEM

Published online by Cambridge University Press:  26 February 2011

Peter Moeck ,
Mukes Kapilashrami ,
Arvind Rao ,
Kirill Aldushin ,
Jeahuck Lee ,
James E. Morris ,
Nigel D. Browning  and
Patrick J. McCann
Peter Moeck
Affiliation:
Portland State University (PSU), Department of Physics, P.O. Box 751, Portland, OR 97207–0751, USA (pmoeck@pdx.edu)
Mukes Kapilashrami
Affiliation:
Portland State University (PSU), Department of Physics, P.O. Box 751, Portland, OR 97207–0751, USA (pmoeck@pdx.edu)
Arvind Rao
Affiliation:
Portland State University (PSU), Department of Physics, P.O. Box 751, Portland, OR 97207–0751, USA (pmoeck@pdx.edu)
Kirill Aldushin
Affiliation:
Institut für Geologie, Mineralogie und Geophysik der Universität Bochum, Universitätsstraβe 150, D-44780 Bochum, Federal Republic of Germany
Jeahuck Lee
Affiliation:
Portland State University, Department of Electrical & Computer Engineering, P.O. Box 751, Portland, OR 97207–0751, USA
James E. Morris
Affiliation:
Portland State University, Department of Electrical & Computer Engineering, P.O. Box 751, Portland, OR 97207–0751, USA
Nigel D. Browning
Affiliation:
Department of Chemical Engineering and Materials Science, University of California at Davis, One Shields Avenue, Davis, CA 95616; and National Center for Electron Microscopy, MS 72–150, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Patrick J. McCann
Affiliation:
University of Oklahoma, School of Electrical and Computer Engineering, Norman, OK 73019, USA
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Abstract

Nominal PbSe nano-islands were grown in the Stranski-Krastanow mode on (111) oriented PbTe/BaF2 pseudo-substrates by molecular beam epitaxy (MBE). The number density and morphology of these islands were assessed by means of atomic force microscopy (AFM). Transmission electron microscopy (TEM) was employed to determine the strain state and crystallographic structure of these islands. On the basis of both AFM and TEM analyses, we distinguish between different groups of tensibly strained islands. The suggestion is made to use such nano-islands as part of nanometrology standards for scanning probe microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B9.4
Copyright
Copyright © Materials Research Society 2005

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References

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