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Noble Gas Induced Defects in Silicon

Published online by Cambridge University Press:  10 February 2011

J. Weber  and
S.K. Estreicher
J. Weber
Affiliation:
Max-Planck-Institut für Festkirperforschung, Heisenbergstr. 1, 70569 Stuttgart, Germanyweber@vaxffl.mpi-stuttgart.mpg.de
S.K. Estreicher
Affiliation:
Physics Department, Texas Tech University, Lubbock, TX 79409, USA
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Abstract

Low energy bombardment of silicon with noble gas ions generates a family of defects with characteristic low-temperature photoluminescence spectra. The defect distribution up to one gtm below the sample surface indicates an unusually enhanced migration mechanism during the bombardment of the specimen. Annealing the samples above 500 °C leads to the disappearance of the photoluminescence spectra and the formation of new, more extended defects, which are excellent gettering sites for transition metals, in particular copper. Systematic calculations of noble-gas vacancy interactions imply a model for the photoluminescing defect where the noble gas atom is trapped by a divacancy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 531
Copyright
Copyright © Materials Research Society 1998

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