Hostname: page-component-5c6d5d7d68-7tdvq Total loading time: 0 Render date: 2024-08-08T05:01:41.763Z Has data issue: false hasContentIssue false
  • English
  • Français

NMR and ESR Studies on a-Si1-x Gex:H Films Prepared by Glow Discharge and Magnetron Sputtering

Published online by Cambridge University Press:  28 February 2011

T. Shimizu ,
M. Kumeda ,
A. Morimoto ,
Y. Tsujimura  and
I. Kobayashi
T. Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
M. Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
A. Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Y. Tsujimura
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
I. Kobayashi
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

Properties of a-Si1-xGex:H films prepared by magnetron sputtering (MG) and glow discharge decomposition (GD) were compared by means of NMR, ESR, IR and hydrogen-evolution measurements. For MG films, the content of dispersed H is roughly independent of x while the content of clustered H decreases with x. For GD films, both the contents of dispersed and clustered H decrease with x. ESR results reveal that most defects in the films are Ge dangling bonds and that the number of dangling bonds per Ge atom is roughly independent of x for MG films whereas it increases largely with x for GD films. Therefore the content of dispersed H has a good correlation with the number of Ge dangling bonds per Ge atom in a-Si1-xGex:H films. The ratio of the intensity of the IR peak at 2100 cm-1 to that at 2000 cm-1 decreases and increases with x, respectively, for MG and GD films, and the ratio of the intensity of the low temperature H evolution peak to that of the high temperature H evolution peak decreases and increases with x, respectively for MG and GD films.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 313
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Nakamura, G., Sato, K., Ishihara, T., Usui, M., Okaniwa, K. and Yukimoto, Y.: J. Non-Cryst. Solids 59/60 (1983) 1111.CrossRefGoogle Scholar
[2] Paul, W., Paul, D. K., Roedern, B. von, Blake, J. and Oguz, S.: Phys. Rev. Lett. 46 (1981) 1016.CrossRefGoogle Scholar
[3] Morimoto, A., Miura, T., Kumeda, M. and Shimizu, T.: Jpn. J. Appl. Phys. 20 (1981) L833.CrossRefGoogle Scholar
[4] Shimizu, T., Nakazawa, K., Kumeda, M. and Ueda, S.: Jpn. J. Appl. Phys. 21 (1982) L351; Physica 117/118 B (1983) 926.CrossRefGoogle Scholar
[5] Kumeda, M., Tsujimura, Y., Yonezawa, Y., Morimoto, A. and Shimizu, T.: Solid State Commun. 55 (1985) 409.CrossRefGoogle Scholar
[6] Reimer, J. A., J. de Phys. 42 (1981) C4–729.Google Scholar
[7] Brodsky, M. H. and Title, R. S.: Phys. Rev. Lett. 23 (1969) 581.CrossRefGoogle Scholar
[8] Shimizu, T., Kumeda, M. and Kiriyama, Y.: Solid State Commun. 37 (1981) 699.CrossRefGoogle Scholar
[9] Beyer, W., Wagner, H. and Finger, F.: J. Non-Cryst. Solids 77/78 (1985) 857.CrossRefGoogle Scholar
[10] Matsuda, A., Yagii, K., Koyama, M., Toyama, M., Imanishi, Y., Ikuchi, N. and Tanaka, K.: Appl. Phys. Lett. 47 (1985) 1061.CrossRefGoogle Scholar
[11] Matsuda, A., Koyama, M., Ikuchi, N., Imanishi, Y. and Tanaka, K.: Jpn. J. Appl. Phys. 25 (1986) L54.CrossRefGoogle Scholar