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Nitrogen-Carbon Interactions in Optical Defects in Silicon

Published online by Cambridge University Press:  28 February 2011

A. Dörnen ,
R. Sauer  and
G. Pensl
A. Dörnen
Affiliation:
Physikalisches Institut (Teil 4), Universität Stuttgart, Federal Republic of Germany
R. Sauer
Affiliation:
Max-Planck-Institut für Festkörperforschung, Stuttgart, Federal Republic of Germany
G. Pensl
Affiliation:
Institut für Angewandte Physik, Universität Erlangen, Federal Republic of Germany
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Abstract

We report five photoluminescence lines N1 through N5 in silicon which emerge after sequential nitrogen and carbon implantation. Studied is in particular the 0.7456 eV (N1) electronic-vibronic spectrum. Single nitrogen and carbon atoms in the defect are identified by isotope shifts of the no-phonon transition and of a local mode satellite with vibration quantum energy ħω= 122.9 meV. Uniaxial stress or Zeeman measurements yield monoclinic I (C1h) or trigonal (C3v) symmetry, respectively, of the optical defect. Comparing the energy of the local mode and its isotope effects with recent literature data on the nitrogen 963 cm−1 IR vibrational absorption line we discuss a defect model involving a substitutional nitrogen atom modified by an interstitial carbon atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 545
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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