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Nickel Foam as a Substrate for III-nitride Nanowire Growth

Published online by Cambridge University Press:  05 April 2013

Michael A. Mastro ,
Neeraj Nepal ,
Fritz Kub ,
Jennifer K. Hite ,
Jihyun Kim  and
Charles R. Eddy Jr.
Michael A. Mastro
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Neeraj Nepal
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Fritz Kub
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Jennifer K. Hite
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
Jihyun Kim
Affiliation:
Department of Chemical and Biological Engineering, Korea University, Seoul, South Korea
Charles R. Eddy Jr.
Affiliation:
U.S. Naval Research Laboratory, 4555 Overlook Ave., SW, Washington, D.C. 20375
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Abstract

This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.

Keywords

nanostructurefoamsemiconducting
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1538: Symposium FF – Compound Semiconductors: Thin-Film Photovoltaics, LEDs and Smart Energy Controls , 2013 , pp. 311 - 316
Copyright
Copyright © Materials Research Society 2013 

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References

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