Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-19T18:02:39.586Z Has data issue: false hasContentIssue false
  • English
  • Français

New Zinc-bis(Dialkylamides) Potentially Usable as Site-Selective Dopants For p-Type ZnSe.

Published online by Cambridge University Press:  22 February 2011

William S. Rees Jr.  and
Oliver Just
William S. Rees Jr.
Affiliation:
MS: B-164, Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida, 32306-3006
Oliver Just
Affiliation:
MS: B-164, Department of Chemistry and Materials Research and Technology Center, The Florida State University, Tallahassee, Florida, 32306-3006
Get access

Abstract

In earlier work, the effective utilization of Zn {N\Si(CH3)3]2}2 as a site-selective dopant for the production of p-type ZnSe by OMVPE was demonstrated. Several new zinc-bis(dialkylamides) of the general form (R)(R′)NZnN(R″)(R‴) now have been prepared. They have been characterized by 1H- and 13C-NMR, GC/MS and elemental analysis. Vapor pressures and gas phase decompositior profiles have been examined. Correlations of vapor pressure and structure are discussed for this series of compounds. A mechanism for the site-selectivity observed in the incorporation of nitrogen is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 219
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

references

1. Nakanishi, K., Suemune, I., Fujii, Y., Kuroda, Y., Yamanishi, M., Appl. Phys. Lett. 59, 1401 (1991).Google Scholar
2. Zmudzinski, C.A., Guan, Y., Zory, P.S., IEEE Photon. Technol. Lett. 2, 94 (1990).CrossRefGoogle Scholar
3. Haase, M.A., Qiv, J., DePuydt, J.M., Cheng, H., Appl. Phys. Lett. 59, 1272 (1991).Google Scholar
4. Qiv, J., DePuydt, J.M., Cheng, H., Haase, M.A., Appl. Phys. Lett. 59, 1992 (1991).Google Scholar
5. Haase, M.A., Cheng, H., Misemer, D.K., Strand, T.A., DePuydt, J.M., Appl. Phys. Lett. 59, 3619 (1991).Google Scholar
6. Jeon, H., Ding, J., Patterson, W., Nurmikiko, A.V., Xie, W., Grilla, D.C., Kobayashi, M., Gunshor, R.L., Appl. Phys. Lett. 59, 3619 (1991).CrossRefGoogle Scholar
7. Rees, W.S. Jr., Anderson, T.J., Green, D.M., Bretschneider, E., in Wide Band-Gap Semiconductors, edited by Moustakas, T.M., Pankove, J.I., Hamakawa, Y. (Mater. Res. Soc. Proc. 242, Pittsburgh, PA, 1992) pp. 281–286.Google Scholar
8. Rees, W.S. Jr., Green, D.M., Anderson, T.J., Bretschneider, E., Pathangey, B., Kim, J., J. Electronic Materials 21, 361 (1992).CrossRefGoogle Scholar
9. Rees, W.S. Jr., Green, D.M., Hesse, W., Anderson, T.J., Pathangey, B. in Chemical Perspectiv of Microelectronic Materials, edited by Abernathy, C. R. et al. (Mat. Res. Soc. Proc. 282, Pittsburgh, PA, 1992) pp. 63–67.Google Scholar
10. Rees, W.S. Jr., Green, D.M. and Hesse, W., Polyhedron, 11, 1667 (1992).Google Scholar
11. Greenwald, A.C., Rees, W.S. Jr., Lay, U.W., in Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Mater. Res. Soc. Proc. 301, Pittsburgh, PA, 1993) pp. 21–26.Google Scholar
12. Rees, W.S., Jr., Lay, U.W., Greenwald, A.C., presentation at the MRS Fall Meeting, Boston, MA, 1993, Abstr. # W2.7.Google Scholar