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New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams

Published online by Cambridge University Press:  21 March 2011

J.P.M. Hoefnagels ,
E. Langereis ,
M.C.M. van de Sanden  and
W.M.M. Kessels
J.P.M. Hoefnagels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
E. Langereis
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
W.M.M. Kessels
Affiliation:
Dept. of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

A new ultrahigh vacuum setup is presented which is designed for studying the surface science aspects of a-Si:H film growth using various advanced optical diagnostic techniques. The setup is equipped with plasma and radical sources which produce well-defined radicals beams such that the a-Si:H deposition process can be mimicked. In this paper the initial experiments with respect to deposition of a-Si:H using a hot wire source and etching of a-Si:H by atomic hydrogen are presented. These processes are monitored by real time spectroscopic ellipsometry and the etch yield of Si by atomic hydrogen is quantified to be 0.005±0.002 Si atoms per incoming H atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.24
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Abelson, J.R., Appl. Phys. A 56, 493 (1993).Google Scholar
2. Kessels, W.M.M., Smets, A.H.M., Marra, D.C., Aydil, E.S., Sanden, M.C.M. van de, Thin Solid Films 383, 154 (2001).Google Scholar
3. Kessels, W.M.M., Hoefnagels, J.P.M., Oever, P.J. van den, Barrell, Y., Sanden, M.C.M. van de, Surf. Sci. Lett. 547, 865 (2003).Google Scholar
4. Coburn, J.W. and Winters, H.F., J. Appl. Phys. 50, 3189 (1979).Google Scholar
5. Keudell, A. Von, Schwarz-Selinger, T., Jacob, W., Appl. Phys. Lett. 79, 676 (2000).Google Scholar
6. Tschersich, K.G., J. Appl. Phys. 87, 2565 (2000).Google Scholar
7. Anton, R., Wiegner, Th., Naumann, W., Liebman, M., Klein, Chr., Bradley, Chr., Rev. Sci. Instrum. 71, 1177 (2000).Google Scholar
8. Collins, R.W., Ferlauto, A.S., Ferreira, G.M., Chen, C., Koh, J., Koval, R.J., Lee, Y., Pearce, J.M., Wronski, C.R., Sol. Energy Mater. Sol. Cells 78, 143 (2003).Google Scholar
9. Marra, D.C., Kessels, W.M.M., Sanden, M.C.M. van de, Kashefizadeh, K., Aydil, E.S., Surf. Sci. 530, 1 (2003).Google Scholar
10. Aarts, I.M.P., Hoex, B., Smets, A.H.M., Engeln, R., Kessels, W.M.M., Sanden, M.C.M. van de, to be published in Appl. Phys. Lett. 84 (2004).Google Scholar
11. Pipino, A.C.R., Hoefnagels, J.P.M., Watanabe, N., J. Chem. Phys. 120, 2879 (2004).Google Scholar
12. Aarts, I.M.P., Hoex, B., Gielis, J.J.H., Leewis, C.M., Smets, A.H.M., Engeln, R., Nesládek, M., Kessels, W.M.M., Sanden, M.C.M. van de, Mat. Res. Soc. Symp. Proc. 762, A19.8.1 (2003).Google Scholar
13. Jellison, G.E. Jr, and Modine, F.A., Appl. Phys. Lett. 69, 371 (1996).Google Scholar
14. Collins, R.W., Koh, J., Ferlauto, A.S., Rovira, P.I., Lee, Y., Koval, R.J., Wronski, C.R., Thin Solid Films 364, 129 (2000).Google Scholar
15. Smets, A.H.M., Kessels, W.M.M., Sanden, M.C.M. van de, Appl. Phys. Lett. 82, 865 (2003).Google Scholar
16. Kamei, T. and Matsuda, A., J. Vac. Sci. Technol. A 17, 113 (1999).Google Scholar
17. Morral, A. Fontcuberta i and Cabarrocas, P. Roca i, J. Non-Cryst. Solids 299, 196 (2002).Google Scholar