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A New Type of Stable and Sensitive UV Detector Fabricated with Amorphous Silicon Based Alloys

Published online by Cambridge University Press:  26 February 2011

Wingo Huang ,
C. Salupo ,
L. F. Szabo ,
G. P. Ceasar  and
W. Javurek
Wingo Huang
Affiliation:
BP America Research Center. 4440 Warrensville Center Road. Cleveland, Ohio, 44128.
C. Salupo
Affiliation:
BP America Research Center. 4440 Warrensville Center Road. Cleveland, Ohio, 44128.
L. F. Szabo
Affiliation:
BP America Research Center. 4440 Warrensville Center Road. Cleveland, Ohio, 44128.
G. P. Ceasar
Affiliation:
BP America Research Center. 4440 Warrensville Center Road. Cleveland, Ohio, 44128.
W. Javurek
Affiliation:
BP America Research Center. 4440 Warrensville Center Road. Cleveland, Ohio, 44128.
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Abstract

A new type of stable and sensitive UV detector has been fabricated with amorphous silicon based alloys. The detector has 50% higher UV sensitivity than GaAsP Schottky photodiodes in the 200nm ∼ 400nm wavelength region. It shows excellent stability to prolonged AM1 and UV light exposures. It also has an extremely low reverse saturation current and can be used as an ultra low noise photodetector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 411
Copyright
Copyright © Materials Research Society 1988

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