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New Results of nc-Si:H Films Prepared by Hydrogen-Diluted Silane in a Triode Pecvd System

Published online by Cambridge University Press:  10 February 2011

Hua Qin ,
Kunji Chen ,
Xinfan Huang ,
Wei Li ,
Kazuyuki Ikuta ,
Akihisa Matsuda  and
Kazunobu Tanaka
Hua Qin
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Kunji Chen
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Xinfan Huang
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Wei Li
Affiliation:
National Laboratory of Solid State Microstructures, Nanjing University; Center for Advanced Studies in Science and Technology of Microstructures, Nanjing 210093, CHINA
Kazuyuki Ikuta
Affiliation:
National Institute for Advanced Interdisciplinary Research Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-Shi, Ibaraki 305, Japan
Akihisa Matsuda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono Tsukuba-Shi, Ibaraki 305, Japan
Kazunobu Tanaka
Affiliation:
National Institute for Advanced Interdisciplinary Research
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Abstract

We report new results on microstructures and electronic properties of nanocrystalline silicon (nc-Si:H) films prepared by a triode PECVD method with a hydrogen diluted silane plasma. The transition from a-Si:H to nc-Si:H was obtained by varying the ratio of H2 to SiH4 while the bias of the grid electrode was fixed at 100.V with respect to the substrate. The threshold value of [H2]/[H2 ]+[SiH4] is about 93.3%. With increasing value of [H2]/[H2]+[SiH4], the volume fraction of crystallinity in nc-Si:H films increased from 12% to 50%, while the average grain size remaind constant. This is quite different from the structures of samples prepared by the conventional diode PECVD with H2 dilution. The traveling-wave technique was applied to study the transport properties of nc-Si:H films, and experimental results confirmed percolation transport in nc-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 301
Copyright
Copyright © Materials Research Society 1996

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