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New Multilayered Materials with Low Dielectric Permittivity for VLSI Applications

Published online by Cambridge University Press:  21 February 2011

V. Mehrotra
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
T. Kwon
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
E. P. Giannelis
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

A new generation of substrate materials with low dielectric permittivity have been developed. These new ceramic-based nanocomposites consist of a quasi two-dimensional, multilayered structure realized by the intercalation of molecular species into the galleries of a host lattice. The materials have been characterized by x-ray diffraction, electronic and infrared spectroscopy. The relative permittivities vary between 2.5 and 4 at 1 MHz. The new hybrids can be processed at relatively low temperatures (below 350°C) and allow for step coverage of submicron structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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