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New Model for “Stretched Exponential” Relaxation
Published online by Cambridge University Press: 10 February 2011
Abstract
A new model to explain stretched exponential relaxation in hydrogenated amorphous silicon is presented. The model does not invoke statistical distributions; rather, it is based on a careful treatment of diffusion, including retrapping. Excellent fits to a variety of experimental data are obtained.
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- Research Article
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- Copyright © Materials Research Society 1996
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