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A New Methodology For Designing Floating Ring Termination Technique In High Voltage Structure

Published online by Cambridge University Press:  10 February 2011

E. Stefanov ,
G. Charitat ,
L. Bailon  and
J. Barbolla
E. Stefanov
Affiliation:
LAAS - CNRS, 7, Avenue Colonel Roche, 31077 Toulouse Cedex, France, stefanov@laas.fr
G. Charitat
Affiliation:
LAAS - CNRS, 7, Avenue Colonel Roche, 31077 Toulouse Cedex, France, stefanov@laas.fr
L. Bailon
Affiliation:
Department of Electronics and Electrotechnic, University of Valladolid, 47071 Valladolid, Spain
J. Barbolla
Affiliation:
Department of Electronics and Electrotechnic, University of Valladolid, 47071 Valladolid, Spain
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Abstract

A new methodology to optimise the design of Floating Ring (FR) termination technique for high voltage device is presented. The basic idea is to simulate the blocking capability of the structure with only one guard ring and then extend the results to a multiple FR system. A second advantage of our method is to include the ring width in the optimisation process. The effectiveness and efficiency of our methodology is illustrated by optimising a FR structure with a junction depth xj=5 μm and Si substrate doping 2.1014cm−3 A seven rings structure is optimized giving 90 % efficiency in respect to the ideal plane parallel junction breakdown voltage VBD =840 V. Moreover the 2D simulation program POWER2D has been extended by an efficient numerical algorithm to reduce drastically the number of iterations when adjusting the quasi-Fermi potential of the rings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 393
Copyright
Copyright © Materials Research Society 1998

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