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A New Method of Identifying the Interfacial Structure in the Type-B CoSi2//Si(111) Bicrystal

Published online by Cambridge University Press:  25 February 2011

A.C. Daykin  and
C.J. Kiely
A.C. Daykin
Affiliation:
Now at The Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
C.J. Kiely
Affiliation:
Department of Materials Science and Engineering, The University of Liverpool, P.O. Box 147 Liverpool L69 3BX, England
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Abstract

A new method of identifying the interfacial structure in the type-B CoSi2//Si(l11) bicrystal is presented. It involves using the kinematic structure factor equation to calculate the levels of contrast which will arise in darkfield micrographs due to steps at the interface. These are then matched to the levels of contrast measured directly from experimental images using an optical densitometer. By analysing the contrast levels measured from the same region of the bicrystal in both g=400B-aCos2 and g=111B-aCos2 micrographs, it is shown that the experimental resultsare consistent with the 7-fold coordinated interfacial structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 243
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Rees, R.V. and Matthai, C.C, J. Phys. C 21 L981(1988).Google Scholar
[2] Tung, R.T., Electron Microscopy Evaluation of Electronic Materials, Nato Adv. Workshop, edited by Cherns, D., (Plenum Press 1988).Google Scholar
[3] Hoek, P.J. van den, Ravenek, W. and Baerends, E.J., Phys. Rev. Lett. 60 174 (1988).Google Scholar
[41 Gibson, J.M., Bean, J.C., Poate, J.M. and Tung, R., Appl. Phys. Lett. 41, 818 (1982).Google Scholar
[5] Tung, R.T., Batstone, J.L. and Yalisove, J., J. Electrochem. Soc. Vol. 136 No.3, 815 (1988).Google Scholar
[6] Fischer, A.E.M.J., Vlieg, E, Veen, J.F. van der, Clausnitzer, M. and Materlik, G., Phys. Rev. B 36 4769 (1987).Google Scholar
[7] Fischer, A.E.M.J., Gustafsson, T. and Veen, J.F. van der, Phys. Rev. B 37, 6305 (1988).Google Scholar
[8] Cherns, D., Phil. Mag. 36 1429 (1974).Google Scholar