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New Bias-Controlled Three-Color Detectors using Stacked a-SiC:H/a-Si:H Heterostructures

Published online by Cambridge University Press:  15 February 2011

Marko Topič
Affiliation:
University of Ljubljana, Faculty of Electrical and Computer Engineering Tržaška 25, 61000 Ljubljana, Slovenia
Franc Smole
Affiliation:
University of Ljubljana, Faculty of Electrical and Computer Engineering Tržaška 25, 61000 Ljubljana, Slovenia
Aleš Groznik
Affiliation:
University of Ljubljana, Faculty of Electrical and Computer Engineering Tržaška 25, 61000 Ljubljana, Slovenia
Jože Furlan
Affiliation:
University of Ljubljana, Faculty of Electrical and Computer Engineering Tržaška 25, 61000 Ljubljana, Slovenia
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Abstract

A novel family of three-terminal three-color (blue, green, red) detectors based on stacked a-SiC:H/a-Si:H heterostructures is presented: TCO/PIN/TCO/PINIP/TCO/metal and TCO/PINIP/TCO/PIN/TCO/metal structure. The analysis of stacked photodetectors and the optimization of their geometrical dimensions is performed using the adopted ASPIN simulation program. Both structures are mutually compared with regard to calculated current-voltage characteristics and spectral responsivity. They both exhibit linear photocurrent/generation-rate relationship for all three colors at peak wavelengths 430, 530, 630 nm, applying ±1 V or more. This linearity allows that all three colors can be detected with high rejection ratio using simple system electronics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

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