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New Approaches for Formation of Ultra-Thin PtSi Layers for Infrared Applications

Published online by Cambridge University Press:  10 February 2011

R. A. Donaton ,
S. Jin ,
H. Bender ,
M. Zagrebnov ,
K. Baert ,
K. Maex ,
A. Vantomme  and
G. Langouche
R. A. Donaton
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Jin
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
H. Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Zagrebnov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Baert
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium INSYS, K. U. Leuven, B-3001 Leuven, Belgium
A. Vantomme
Affiliation:
Instituut voor Kern- en Stralingsfysika, K. U. Leuven, B-3001 Leuven, Belgium
G. Langouche
Affiliation:
Instituut voor Kern- en Stralingsfysika, K. U. Leuven, B-3001 Leuven, Belgium
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Abstract

In this work we describe the formation of ultra-thin PtSi layers using sputtering for metal deposition and RTP for the silicidation. The problem associated with the controllability of deposition of ultra-thin metal layers can be circumvented by depositing a thick Pt layer followed by a 2-step RTP process with a selective etch step in between. Continuous and uniform 3 nm thick PtSi layers are formed with this technique. Moreover, in another approach similar to the previous one, but in which the first RTP step is omitted, a much smoother PtSi layer is formed. The importance of the interfacial Pt/Si layer formed during metal deposition is described. These processes are totally compatible with CMOS technologies, as shown below.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 525: Symposium W – Rapid Thermal & Integrated Processing VII , 1998 , 307
Copyright
Copyright © Materials Research Society 1998

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References

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