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A New Approach to Temperature Dependent Ideality Factors in Schottky Contacts

Published online by Cambridge University Press:  25 February 2011

Zs. J. Horváth
Zs. J. Horváth*
Affiliation:
Research Institute for Technical Physics of the Hungarian Academy of Sciences, Budapest, P.O. Box 76. H-1325, Hungary
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Abstract

Schottky diodes often exhibit anomalous current-vol tage characteristics at low temperatures (T) with T dependent ideality factors (IF) and apparent barrier heights (BH) evaluated for the thermionic emission. In this paper theoretical expressions are first presented for the T dependences of the IF and the apparent BH for the thermionic-field emission (TFE) including the bias dependence of BH. Model calculations are reported, which has been performed using these expressions, and their results are compared with the available experimental data. It is shown that the T dependence of the 1 Fs and apparent BHs often may be explained self consistently by the TFE with anomalously high characteristic energies Eoo.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 359
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Bhuiyan, A. S., Martinez, A., and Esteve, D., Thin Solid Films 161, 93 (1988).CrossRefGoogle Scholar
2. Hackam, R. and Harrop, P., IEEE Trans. Electron. Dev. ED-19, 1231 (1972).CrossRefGoogle Scholar
3. Aboelfotoh, M. O. and Tu, K. N., Phys. Rev. B 34, 2311 (1986).CrossRefGoogle Scholar
4. Aboelfotoh, M. O., Phys. Rev. B 39, 5070 (1989).CrossRefGoogle Scholar
5. Singh, A., Reinhardt, K. C., and Anderson, W. A., J. Appl. Phys. 68, 3475 (1990).CrossRefGoogle Scholar
6. Werner, J. H. and Güttler, H. H., J. Appl. Phys. 69, 1522 (1991).CrossRefGoogle Scholar
7. Aboelfotoh, M. O., J. Appl. Phys. 69, 3351 (1991).CrossRefGoogle Scholar
8. Padovani, F. A. and Sumner, G. G., J. Appl. Phys. 36, 3744 (1965).CrossRefGoogle Scholar
9. Levine, J. D., J. Appl. Phys. 42, 3991 (1971).CrossRefGoogle Scholar
10. Crowell, C. R., Solid-State Electron. 20, 171 (1977).CrossRefGoogle Scholar
11. Crowell, C. R. and Rideout, V. L., Solid-State Electron. 12, 89 (1969).CrossRefGoogle Scholar
12. Padovani, F. A., in Semiconductors and Semimetals, edited by Willardson, E. K. and Beer, A. C. (Academic Press, New York, 1971) Vol. 7, Part A, Chap. 2., pp. 75–146.Google Scholar
13. Ashok, S., Borrego, J. M., and Gutmann, R. J., Solid-State Electron. 22, 621 (1979).CrossRefGoogle Scholar
14. Hanselaer, P. L., Laflere, W. H., Van Meirhaeghe, R. L., and Cardon, F., J. Appl. Phys. 56, 2309 (1984).CrossRefGoogle Scholar
15. Cova, P. and Singh, A., Solid-State Electron. 33, 11 (1990).CrossRefGoogle Scholar
16. Chin, V. W. L., Green, M. A., and Storey, J. W. V., Solid-State Electron. 33, 299 (1990).CrossRefGoogle Scholar
17. Tung, R. T., Appl. Phys. Lett., 58, 2821 (1991).CrossRefGoogle Scholar
18. Werner, J. H. and Güttler, H. H., Physica Scripta T39, 258 (1991).CrossRefGoogle Scholar
19. Sullivan, J. P., Tung, R. T., Pinto, M. R., Graham, W. R., J. Appl. Phys., 70, 7403 (1991).CrossRefGoogle Scholar
20. Rau, U., Güttler, H. H., Werner, J. H., and Tung, R. T., presented at the 1992 MRS Spring Meeting, San Francisco, CA, USA, 1992.Google Scholar
21. Song, Y. P., Van Meirhaeghe, R. L., Laflére, W. H., and Cardon, F., Solid-State Electron. 29, 633 (1986).CrossRefGoogle Scholar
22. Card, H. C. and Rhoderick, E. H., J. Phys. D, 4, 1589 (1971).CrossRefGoogle Scholar
23. Rhoderick, E. H., Metal-Semiconductor Contacts (Clarendon, Oxford, 1978) Chap. 3.Google Scholar
24. Wu, C. -Y., J. Appl. Phys. 53, 5947 (1982).CrossRefGoogle Scholar
25. Fonash, S. J., J. Appl. Phys., 54, 1966, (1983).CrossRefGoogle Scholar
26. Lu, G. N., Barret, C., and Nefatti, T., Revue Phys. Appl., 22, 1169 (1987).CrossRefGoogle Scholar
27. Horváth, Zs. J., J. Appl. Phys. 63, 976, (1988).CrossRefGoogle Scholar
28. Lu, G. N., Barret, C., and Nefatti, T., Solid-State Electron., 33, 1 (1990).CrossRefGoogle Scholar
29. Maeda, K., Umezu, I., Ikoma, H., and Yoshimura, T., J. Appl. Phys., 68, 2858 (1990).CrossRefGoogle Scholar
30. Ikoma, H. and Maeda, K., Jap. J. Appl. Phys., 30, 19 (1991).Google Scholar
31. Padovani, F. A. and Stratton, R., Solid-State Electron. 9, (1966) 695.CrossRefGoogle Scholar
32. Wagner, L. F., Young, R. W., and Sugerman, A., IEEE Electron. Dev. Lett. EDL-4, 320 (1983).CrossRefGoogle Scholar
33. Horváth, Zs. J., Proc. Int. Conf. Microelectronics, Warsaw, Sept. 21–23, 1992, (SPIE Proc. WA92, Beüingham, WA, USA, 1992) (in press).Google Scholar
34. Horváth, Zs. J. (unpublished).Google Scholar
35. Saxena, N., Surf. Sci., 13, 151 (1969).CrossRefGoogle Scholar
36. Rideout, V. L., Thin Solid Films, 48, 261 (1978).CrossRefGoogle Scholar
37. Tuck, B., Eftekhari, G., and de Cogan, D. M., J. Phys. D, 15, 457 (1982).CrossRefGoogle Scholar
38. Hanselaer, P. L., Laflere, W. H., Van Meirhaeghe, R. L., and Cardon, F., J. Appl. Phys., 56, 2309 (1984).CrossRefGoogle Scholar
39. Aboelfotoh, M. O., J. Appl. Phys. 66, (1989) 262.CrossRefGoogle Scholar
40. Aboelfotoh, M. O., Cros, A., Svensson, B. G., and Tu, K. N., Phys. Rev. B, 41, 9819 (1990).CrossRefGoogle Scholar
41. Aboelfotoh, M. O., Solid-State Electron., 34, 51 (1991).CrossRefGoogle Scholar
42. Horváth, Zs. J., J. Appl. Phys. 64, 6780 (1988).CrossRefGoogle Scholar
43. Rideout, V. L. and Crowell, C. R., Solid-State Electron. 13, 993 (1970).CrossRefGoogle Scholar
44. Pécz, B., Jároli, E., Radnóczi, G., Veresegyházy, R., and Mojzes, I., Phys. Stat. Sol. (A) 94, 507 (1986).CrossRefGoogle Scholar
45. Pécz, B., Radnóczi, G., Horváth, Zs. J., Barna, P. B., Jároli, E., and Gyulai, J., J. Appl. Phys. 71 3408 (1992).CrossRefGoogle Scholar
46. Aboelfotoh, M. O., J. Appl. Phys. 61 2558 (1987).CrossRefGoogle Scholar