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A New Approach for Determining Epilayer Strain Relaxation and Composition Through High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  15 February 2011

K. M. Matney  and
M.S. Goorsky
K. M. Matney
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
M.S. Goorsky
Affiliation:
University of California, Los Angeles, Department of Materials Science and Engineering, Los Angeles, CA 90095-1595
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Abstract

ABSTRACT

We developed a new method of determining epilayer relaxation (along one direction) and composition using a symmetric and any single asymmetric high resolution x-ray diffraction scan. The previous use of small angle approximations can be very detrimental to calculated results and should be avoided. This new method does not employ small angle approximations or first order Taylor approximations, producing accurate results. The effect of x-ray geometry (glancing incident versus glancing exit) on the analysis of epilayer composition and strain is also reviewed. It is also shown that the glancing exit geometry is generally less susceptible to experimental error.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 257
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1 Bartels, W.J. and Nijman, W., J. Cryst. Growth 44 (1978) 518.Google Scholar
2 Macrander, A.T., Schwartz, G.P., and Gualtieri, G.J., J. Electrochem. Soc. 134 (1987) 578C.Google Scholar
3 Swaminathan, V. and Macrander, A.T., Materials Aspects of GaAs and InP Based Structures (Prentice Hall, Englewood Cliffs, New Jersey (1991).Google Scholar
4 Leiberich, A. and Levkoff, J., J. Cryst. Growth 100 (1990) 330.Google Scholar
5 Wie, C.R., SPIE 877 41 (1988)Google Scholar
6 Herzog, H.-J., Kasper, E., J. Cryst. Growth, 144(1994) 177.Google Scholar
7 Halliwell, M.A.G., in Advances in X-Ray Analysis, Vol. 33, Edited by Barrett, C.S. et al. Plenum Press, New York, 1990.Google Scholar
8 Heinke, H., Moller, M.O., Hommel, D., Landwehr, G., J. Crsyt. Growth 135 (1994) 41.Google Scholar