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A New Application of Rbs-Pixe with High Energy Microbeam

Published online by Cambridge University Press:  25 February 2011

B. Raicu ,
H. Bakhru ,
S. Fesseha  and
W. M. Gibson
B. Raicu
Affiliation:
1033 Crestview Drive, Suite 307, Mountain View, CA, 94040
H. Bakhru
Affiliation:
Physics Department, State University of New York at Albany, Albany, New York 12222
S. Fesseha
Affiliation:
1033 Crestview Drive, Suite 307, Mountain View, CA, 94040
W. M. Gibson
Affiliation:
Physics Department, State University of New York at Albany, Albany, New York 12222
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Abstract

A beam of 2 MeV He+ ions with a diameter of 2 microns was used to perform Rutherford backscattering (RBS) and particle induced x-ray emission (PIXE) analysis on large residual defects formed by high dose arsenic (As) ion implantation and furnace annealing. Research results concerning contamination in implanted silicon wafers generated by primary beam sputtering, inadequate wafer transport system, and other technological factors are presented.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 293
Copyright
Copyright © Materials Research Society 1986

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References

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