Neodymium and Erbium Implanted Gan

E. Silkowski; Y. K. Yeo; R. L. Hengehold; B. Goldenberg; G. S. Pomrenke

doi:10.1557/PROC-422-69

Abstract

Strong rare earth (RE) emissions from Nd and Er implanted into MOCVD grown GaN were observed through photoluminescence (PL) with below bandgap excitation from an Ar+laser. Three well resolved manifolds of 4f lines from the crystal-field split 4F3/2 → 4I9/2, 4F3/2 → 4I11/2, and 4F3/2 → 4I13/2 transitions of Nd3+ were observed at low temperature at ˜0.98, ˜1.14, and ˜1.46 μm, respectively. The Er implanted GaN showed both the 4I13/2 → 4I15/2 Er3+ transition at ˜1.54 μm and the 4I11/2 → 4I15/2 Er3+ transition at ˜1.00 μm. The Er luminescence at ˜1.54 μm and Nd luminescence at ˜1.1 μm persisted to room temperature. Both Er and Nd implanted samples showed increasing RE3+ signal as annealing temperature increased from 700 to 1000 °C. The growth of new 4f crystal-field split-lines in the ˜1.54 μm 4I13/2 → 4I15/2 manifold as annealing temperature was increased to 1000 °C suggests multiple Er3+ radiative centers.

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