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Negative Differential Resistance Characteristics of Silicon Nanocrystal Memory

Published online by Cambridge University Press:  17 March 2011

Seung Jae Baik  and
Koeng Su Lim
Seung Jae Baik
Affiliation:
also with Samsung Electronics co.
Koeng Su Lim
Affiliation:
Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, 373-1, Kusong-dong, Yusong-gu, Taejon 305-701, Korea
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Abstract

Two-dimensional (2D) Si quantum dot array was fabricated by oxidation of microcrystalline Si film deposited by photo chemical vapor deposition (photo-CVD). Average size of Si quantum dot was estimated to be 2.4nm and dot density 7 ∼ 8 ×1011 cm−2. Nanocrystal memory device with this 2D quantum dot array demonstrated negative differential resistance characteristics and single charge tunneling phenomena, which was observed as stepwise decrease of gate transconductance. Interface states at the oxidized surface of quantum dots were assumed to explain temperature dependence characteristics. This new process is adequate for functional device application of nanocrystal metal-oxide-semiconductor (MOS) memory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A14.5
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Averin, D. V. and Likharev, K. K., Single Charge Tunneling, Plenum (Newyork), 1992, p. 311 Google Scholar
[2] Nakazato, K., Blaikie, R. J., and Ahmed, H., J. Appl. Phys., Vol. 75, No. 10, pp. 5123–5134 (1994)Google Scholar
[3] Fulton, T. A. and Dolan, G. J., Phys. Rev. Lett., Vol. 59, No. 1, pp. 109–112 (1987)Google Scholar
[4] Yano, K., Ishii, T., Kobayashi, T., Murai, F., and Seki, K., ED-41, No.9, pp. 1628–1638 (1994)Google Scholar
[5] Yano, K. et al. , US patent No. 5,600,163, Feb 4 1997 Google Scholar
[6] Tiwari, S., Rana, F., Hanafi, H., Hartstein, A., Crabbe, E. F., and Chan, K., Appl. Phys. Lett., Vol. 68, No. 10, pp. 1377–1379 (1996)Google Scholar
[7] Guo, L., Leobandung, E., and Chou, S. Y., Appl. Phys. Lett., Vol. 70, No. 7, pp. 850–852 (1997)Google Scholar
[8] Chen, C. D., Nakamura, Y., and Tsai, J. S., Appl. Phys. Lett., Vol. 71, No. 14, pp. 2038–2040 (1997)Google Scholar
[9] Thean, A. and Leburton, J. P., Electron Device Letters, Vol. 20, No. 6, pp. 286–288 (1999)Google Scholar
[10] Hanifi, H. I., Tiwari, S., and Khan, I., ED-43, No. 9, pp. 1553–1558 (1996)Google Scholar
[11] Eden, J. G., ‘Photo Chemical Vapor Deposition’, John Wiley & Sons (1992)Google Scholar
[12] Shi, Yi, Saito, K., Ishikuro, H., and Hitamoto, T., Jpn. J. Appl. Phys. Vol. 38, pp. 425–428 (1999)Google Scholar
[13] Okada, R., Lijima, S., Appl. Phys. Lett., Vol. 58, No. 15, pp.1662–1663 (1991)Google Scholar
[14] Kao, Dah-Bin, Mcvittie, J. P., Nix, W. D., and Saraswat, K. C., ED-35, No. 1, pp.25–37 (1988)Google Scholar
[15] Boeringer, D. W. and Tsu, R., Phys. Rev. B, Vol. 51, No. 19, pp.13337–13343 (1995)Google Scholar
[16] Nicollian, Edward H. and Tsu, Raphael, J. Appl. Phys., Vol. 74, No. 6, pp. 4020–4025 (1993)Google Scholar
[17] Kohno, A. et al. , Extended Abstracts of the 1998 International Conference on Solid State Devices and Materials, pp. 174–175 (1998)Google Scholar