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Near-Surface Density of States in a-Si:H By Photoelectron Yield Spectroscopies.

Published online by Cambridge University Press:  21 February 2011

S.L. Wang ,
F. Patriarca  and
F. Evangelisti
S.L. Wang
Affiliation:
Department of Physics, University “La Sapienza” Rome, Italy
F. Patriarca
Affiliation:
Department of Physics, University “La Sapienza” Rome, Italy
F. Evangelisti
Affiliation:
Department of Physics, University “La Sapienza” Rome, Italy
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Abstract

The density of occupied states was investigated in a number of intrinsic a-Si:H samples by means of photoelectron yield spectroscopy operated in the constant final state mode. Valence band edge, exponential tail and deep state distribution were analyzed and compared with the bulk density of states as determined by spectral dependence of photoconductivity. By evaporating Cs atoms on the clean surface the Fermi level position was progressively shifted toward the conduction band and the evolution of localized states was investigated. On the assumption that these near-surface states are paramagnetic centers with positive correlation energy, the results agree with the prediction of the “defect pool” model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 241
Copyright
Copyright © Materials Research Society 1992

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References

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