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Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys

Published online by Cambridge University Press:  21 March 2011

A. M. Mintairov ,
P. A. Blagnov ,
T. Kosel ,
J. L. Merz ,
V. M. Ustinov ,
A. S. Vlasov  and
R. E. Cook.
A. M. Mintairov
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, 46556 Ioffe Physical-Technical Institute RAS, Polytechnicheskaya 26, St.Petersburg, Russia
P. A. Blagnov
Affiliation:
Ioffe Physical-Technical Institute RAS, Polytechnicheskaya 26, St.Petersburg, Russia
T. Kosel
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, 46556
J. L. Merz
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, 46556
V. M. Ustinov
Affiliation:
Ioffe Physical-Technical Institute RAS, Polytechnicheskaya 26, St.Petersburg, Russia
A. S. Vlasov
Affiliation:
Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, 46556
R. E. Cook.
Affiliation:
Argonne National Laboratory, Argonne, IL, 60439.
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Abstract

We used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appearance of narrow emission lines (halfwidth 0.5−2 meV) at temperatures below 70K. We estimated the size, density, and nitrogen excess of individual compositional fluctuations (clusters), revealing phaseseparation effects in the distribution of nitrogen in GaAsN and InGaAsN. We found a dramatic difference in the Zeeman splitting of cluster lines between GaAsN and InGaAsN, indicating a strong effect of In on the exciton g-factor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H2.8.1
Copyright
Copyright © Materials Research Society 2002

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