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Near Field Scanning Optical Microscopy and Spectroscopy of Electronic Materials and Structures

Published online by Cambridge University Press:  15 February 2011

W. M. Duncan
W. M. Duncan*
Affiliation:
Corporate Research and Development, Texas Instruments Incorporated, P.O. Box 655936, MS 147, Dallas, TX 75265, WDUNCAN@TI.COM
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Abstract

A Near Field Scanning Optical Microscope (NSOM) with spectroscopic capability is applied to imaging semiconductor and microelectronic structures. NSOM combined with spectroscopic analysis provides physical and chemical information of thin films and defects with ultra high spatial resolution. We have studied epitaxial and bulk samples and partially fabricated SiO2/Si CMOS structures to investigate the spatial resolution and imaging modes of NSOM. Reflected intensity contrast in NSOM yields images of defect networks in InGaAs/InAlAs/GaAs epitaxial layers and shows thickness variations in SiO2 films on Si. Surface topological changes observed in NSOM demonstrate a spatial resolution of significantly better than 0.25 μm. Fluorescence imaging is examined for chemically identifying materials and defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 183
Copyright
Copyright © Materials Research Society 1996

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