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N-Channel and P-Channel LPCVD Polysilicon Mosfet's and Effects of Grain Boundary Passivation

Published online by Cambridge University Press:  21 February 2011

H. Shichijo ,
S. D. S. Malhi ,
P. K. Chatterjee ,
A. H. Shah ,
G. P. Pollack ,
W. H. Richardson ,
R. R. Shah ,
M. A. Douglas  and
H. W. Lam
H. Shichijo
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
S. D. S. Malhi
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
P. K. Chatterjee
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
A. H. Shah
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
G. P. Pollack
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
W. H. Richardson
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
R. R. Shah
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
M. A. Douglas
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
H. W. Lam
Affiliation:
Semiconductor Process and Design Center, Texas Instruments Incorporated, P. O. Box 225621, Dallas, Texas 75265
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Abstract

MOSFETs built in a thin layer of as-deposited, small-grain LPCVD polysilicon offer an attractive alternative to the beam recrystallized SOI MOSFETs because of its simple process and low cost. The inherently inferior performance of polysilicon MOSFET can be improved by the grain boundary passivation in hydrogen plasma. The device characteristics of n-channel and p-channel polysilicon MOSFETs are compared before and after the hydrogen passivation. Dramatic improve-ment of drive current and curtailment of leakage current has been observed after the passivation. The anomalous leakage current has been observed and is attributed to the soft breakdown of the drain junction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 193
Copyright
Copyright © Materials Research Society 1984

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References

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