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Nano-Structured Silicon-Based Films with Visible Light Emission Synthesized by Laser Ablation

Published online by Cambridge University Press:  15 February 2011

T. Makimura
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan, makimura@mat.ims.tsukuba.ac.jp
Y. Kunu
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan, makimura@mat.ims.tsukuba.ac.jp
N. Ono
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan, makimura@mat.ims.tsukuba.ac.jp
K. Murakami
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan, makimura@mat.ims.tsukuba.ac.jp
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Abstract

Applying laser ablation technique, we have synthesized two types of SiO2 films that include nanometer-sized Si particles. One is synthesized by alternative deposition of Si nanoparticles layers and SiO2 layers. The synthesized film exhibits red photoluminescence (PL) with a peak energy below 1.5 eV. The other is synthesized by annealing at 1000°C of SiOx films, which are formed by laser ablation in diluted O2 gas. We find that there is a narrow range of composition for efficient red PL. Based on the experimental results, we tentatively discuss a possible model for the origin of the red PL.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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