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Nanoscale Features Grown by MBE on Nonplanar Patterned Si Substrates

Published online by Cambridge University Press:  15 February 2011

Karl D. Hobart ,
Fritz J. Kub ,
Henry F. Gray ,
Mark E. Twigg ,
Doewon Park  and
Phillip E. Thompson
Karl D. Hobart
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
Fritz J. Kub
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
Henry F. Gray
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
Mark E. Twigg
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
Doewon Park
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
Phillip E. Thompson
Affiliation:
Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375
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Abstract

Si growth by molecular beam epitaxy on nonplanar patterned Si substrates is studied as a function of growth parameters. The substrates consist of a truncated pyramid template with {111} sides and (100) tops formed by anisotropic etching of Si(100). For growth temperatures ≤ 550°C no qualitative changes in the morphology of the template are observed. At growth temperatures between 650–700°C {113} facets begin to form on the (100) surface and reduce the lateral dimensions of the (100) facet to < 20 nm. At high temperatures (∼800°C) {113} facets remain stable and {111} facets no longer exist. The small (100) mesa formed at medium temperatures by facet reduction is exploited through the growth of Si/Si 1-xGex multiple quantum wells leading to low-dimensional structures. Observations are quantified by scanning electron and transmission electron microscopies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 380: Symposium D – Materials–Fabrication and Patterning at the Nanoscale , 1995 , 9
Copyright
Copyright © Materials Research Society 1995

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References

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