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Nanoscale Electrochemical Deposition of Metals on FIB Sensitized p-Type Silicon

Published online by Cambridge University Press:  15 March 2011

Adrian Spiegel ,
M. Döbeli  and
Patrik Schmuki
Adrian Spiegel
Affiliation:
Swiss Federal Institute of Technology Lausanne (EPFL), Dept. of Materials Science, LTP, CH-1015 Lausanne, SWITZERLAND
M. Döbeli
Affiliation:
Swiss Federal Institute of Technology Zurich (ETHZ), Inst. of Particle Physics, HPK, CH-8039 Zurich, SWITZERLAND
Patrik Schmuki
Affiliation:
Dept. of Material Science, LKO, University of Erlangen-Nuremberg, D-91058 Erlangen, GERMANY
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Abstract

Sub-micrometer copper nanostructures were deposited on p-type silicon (p-Si) by means of a selective electrochemical reaction. Ga+-ions from a focused ion beam (FIB) were used to 'write' damage patterns on p-Si; in a subsequent electrochemical reaction Cu was deposited selectively at these defect sites. So far we have been able to obtain Cu structures with a lateral resolution of 300nm, which is also the limit of the FIB currently used.

The process may offer advantages over traditional lithographic methods for producing nanometer sized metal structure on Si as no masking steps are required. Also, structures with a lateral resolution in the sub- 100nm region seem possible; so far the process has only been limited by the FIB's lateral resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 705: Symposium Y – Nanopatterning–From Ultralarge-Scale Integration to Biotechnology , 2001 , Y4.3
Copyright
Copyright © Materials Research Society 2002

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