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Nanomechanical Properties of Amorphous Carbon and Carbon Nitride Thin Films Prepared by Shielded Arc Ion Plating

Published online by Cambridge University Press:  10 February 2011

N. Tajima ,
H. Saze ,
H. Sugimura  and
O. Takai
N. Tajima
Affiliation:
Department of Materials Processing Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, JAPAN, sugimura@numse.nagoya-u.ac.jp, takai@otakai.numse.nagoya-u.ac.jp
H. Saze
Affiliation:
Department of Materials Processing Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, JAPAN, sugimura@numse.nagoya-u.ac.jp, takai@otakai.numse.nagoya-u.ac.jp
H. Sugimura
Affiliation:
Department of Materials Processing Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, JAPAN, sugimura@numse.nagoya-u.ac.jp, takai@otakai.numse.nagoya-u.ac.jp
O. Takai
Affiliation:
Department of Materials Processing Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, JAPAN, sugimura@numse.nagoya-u.ac.jp, takai@otakai.numse.nagoya-u.ac.jp
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Abstract

Hydrogen free amorphous carbon (a-C) and carbon nitride (a-C:N) were synthesized by means of shielded arc ion plating in which a shielding plate was inserted between a target and a substrate in order to reduce macroparticle deposition onto the substrate. Using a graphite target as a cathode, thin films of a-C and a-C:N were prepared in an arc discharge plasma of argon or nitrogen gas, respectively, at a pressure of 1 Pa. Based on nanoindentation, mechanical properties of these films were studied in relation to substrate bias voltage (Vs). The a-C films prepared at Vs ranging from -50 to -200 V consisted of diamond-like phase and showed hardness higher than 20 GPa with its maximum of 35 GPa at Vs = -100 V. However, hardness of the films deposited at Vs < 300 V was less than 7 GPa indicating that the films were converted to graphite-like phase due to excessive ion impact in Ar plasma. Wear resistance of the a-C films was closely related to their hardness. Namely, a harder a-C film was more wear resistant. On the contrary, hardness of the a-C:N films was less dependent on Vs. It remained in the range of 10 to 15 GPa and was much lower than the maximum hardness of the a-C films. Nevertheless, the wear resistance of the a-C:N films was comparable to or much better than the a-C films. In particular, the a-C:N film prepared at Vs = -300 V was so wear resistant that the film showed no apparent wear when rubbed with a diamond tip less than 100 nm in tip-diameter at a contact force of 20μN. The presence of β-C3N4like phase characterized by a N1 s XPS peak at 400.5 eV has found to be crucial for high wear resistance of the a-C:N films

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 371
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Special Issue on Diamond and DLC Films, Diamond Films and Technol. 3, 3 (1994).Google Scholar
2. McKenzie, D.R., Rep. Prog. Phys. 59, 1611 (1996).Google Scholar
3. Robertson, J., Prog. Solid Chem. 21, 199 (1991).Google Scholar
4. Liu, A.Y. and Cohen, M.L., Science 245, 841 (1989).Google Scholar
5. Liu, A.Y. and Wentzcovitch, R.M., Phys. Rev. B 50, 10362 (1994).Google Scholar
6. Taki, Y., Kitagawa, T. and Takai, O., Thin Solid Films 304, 183 (1997).Google Scholar
7. Muller, D. E. et al. , J. Mater. Eng. And Performance 27, 139 (1994).Google Scholar
8. Gupta, B. K. and Bhushan, B., Wear 190, 110 (1995).Google Scholar
9. Ganapathi, S.K. and Riener, T.A., ASME J. Tribol. 177, 86 (1995).Google Scholar
10. Li, D., Chung, Y.W., Wong, M.S. and Sproul, W.D., J. Appl. Phys. 36, 230 (1997).Google Scholar
11. Ogata, K., Chubaci, J.F.D. and Fujimoto, F., J. Appl. Phys. 76, 3791 (1994).Google Scholar
12. Chen, M.Y., Li, D., Lin, X., Dravid, V.P., Chung, Y.W., Wong, M.S. and Sproul, W.D., J. Vac. Sci. Tecchnol. A 11, 521 (1993).Google Scholar
13. Robertson, J., Pure & Appl. Chem. 66, 1789 (1994).Google Scholar
14. Tajima, N., Saze, H., Sugimura, H. and Takai, O., Jpn. J. Appl. Phys. 38, L 1131 (1999).Google Scholar
15. Oliver, W.C. and Pharr, G.M., J. Mater. Res. 7, 1564 (1992).Google Scholar
16. Lu, W. and Komvopoulos, K., J. Appl. Phys. 85, 2642 (1999).Google Scholar
17. Sjöström, H., Stafström, S., Boman, M. and Sundgren, J.E., Phys. Rev. Lett. 75, 1336 (1995).Google Scholar
18. Hoffman, A., Brener, R., Goouzman, I., Cytermann, C., Geller, H., Levin, L. and Kenny, M., Diamond Relat. Mater. 4, 292 (1995).Google Scholar
19. Marton, D., Boyd, K.J., Al-Bayati, A.H., Todorov, S.S. and Rabalais, J.W., Phys. Rev. Lett. 73, 118 (1994).Google Scholar
20. Boyd, K.J., Marton, D., Todorov, S.S., AI-Bayati, A.H., Kulik, J., Zuhr, R.A. and Rabalais, J.W., J. Vac. Sci. Technol. A 13, 2110 (1995).Google Scholar
21. Chen, L.C., Yang, C.Y., Bhusari, D.M., Chen, K.H., Lin, M.C., Lin, J.C. and Chuang, T.J., Diamond Relat. Mater. 5, 514 (1996).Google Scholar
22. Souto, S., Pickholz, M., Santos, M. C. dos and Alvarez, F, Phys. Rev. B 75, 2536 (1998).Google Scholar