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Nanocrystalline Silicon Carbide Film Growth Using Hot Filament CVD

Published online by Cambridge University Press:  10 February 2011

M.B. Yu ,
Rusli S.F. ,
Yoon J. ,
Cui K. Chew ,
J. Ahn  and
Q. Zhang
M.B. Yu
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Rusli S.F.
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Yoon J.
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Cui K. Chew
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
J. Ahn
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
Q. Zhang
Affiliation:
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Republic of Singapore
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Abstract

Nanocrystalline cubic silicon carbide (nc-SiC) films embedded in an amorphous SiC matrix was fabricated by the hot filament chemical vapor deposition (HFCVD) technique using methane and silane as reactance gases. The presence of nanocrystalline grains was confirmed by the high resolution transmission electron microscope (HRTEM). x-ray photoelectron spectroscopy (XPS) measurements showed that the atomic percentages of Si and C are nearly 50%. X-ray diffraction spectrum of the sample revealed a diffraction peak of 3C-SiC (111) at 2ϕ=35.6°. Infrared absorption of the film had a strong peak at 800 cm−1 which is related to the transverse optical phonons of Si-C bonds in 3C-SiC. Raman spectrum of the sample showed that there are two peaks at 790 cm−l and 970 cm−1 which correspond to longitudinal and transverse optical phonons of SiC respectively. Room temperature photoluminescence (PL) study of these nc-SiC samples revealed a visible peak at 2.2 eV, which has not been observed so far for 3C-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 593: Symposium U – Amorphous & Nanostructured Carbon , 1999 , 517
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

(1) Casady, J.B. and Johnson, R.W., Solid-State Electronics 39, 1409 (1996).Google Scholar
(2) Ikeda, M., Hayakawa, T., Yamagiwa, S., Matsunami, H., and Tanaka, T., J.Appl. Phys. 50, 8215 (1979)Google Scholar
(3) Hoffman, L., Ziegler, G., Theis, D. and Weyrich, C., J. Appl. Phys. 53, 6962 (1982)Google Scholar
(4) Matsumoto, T., takahashi, J., Tamaki, T., Futagi, T., and Mimura, H., Appl. Phys.Lett. 64, 226 (1994)Google Scholar
(5) Liao, Liang-Sheng. Bao, Xi-Mao, Yang, Zhi-Feng, and Min, Nai-Ben, Appl. Phys. Lett. 66, 2382 (1995)Google Scholar
(6) Furukawa, S. and Miyasato, T., Jpn. J. Appl. Phys., Part 2 27, L2207 (1988)Google Scholar
(7) Kanemitsu, Yoshihiko, Phys. Rev. B 48, 4883 (1993)Google Scholar
(8) Min, K. S., Shcheglov, K.V., Yang, C.M., Atwater, H.A., Brongersma, M.L. and Polman, A., Appl. Phys. Lett. 69, 2033 (1996)Google Scholar
(9) Augustine, B.H., Irene, E.A., He, Y.J., Price, K.J., Mcneil, L.E., Christensen, K.N. and Maher, D.M., J. Appl. Phys. 78, 4020 (1995)Google Scholar
(10) Lei, T.M., Chen, Z.M., Ma, J.P. and Yu, M.B., Chinese Journal of Semiconductors, 18, 317 (1997)Google Scholar
(11) Briggs, D. and Seah, M.P., Practical Surface Analysis by Auger and x-ray Photoelectron Spectroscopy (Wiley, New York, 1983)Google Scholar
(12) Sun, Y., Miyasato, T. and Sonda, N., J. Appl. Phys. 84, 6451 (1998)Google Scholar
(13) Burton, J.C., Sun, L., Pophristic, M., Lukacs, S.J., and Long, F.H., J. Appl. Phys. 84. 6268 (1998)Google Scholar
(14) Takagahara, T. and Takeda, K., Phys.Bev. B 46, 15578 (1992)Google Scholar