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Nanocluster Epitaxy by Annealing: Ag on H-terminated Si (111) Surfaces

Published online by Cambridge University Press:  11 February 2011

B.Q. Li ,
Y.F. Shi ,
J. Bording  and
J.M. Zuo
B.Q. Li
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Y.F. Shi
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J. Bording
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J.M. Zuo
Affiliation:
Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

We report an experimental investigation on the morphology and orientation of Ag nanoclusters by RT deposition and subsequent annealing. We show that epitaxial Ag clusters of 2 ∼ 6 nm in diameter can be synthesized in this way. The RT self-assembled Ag clusters grow as mostly single-crystal crystallites with Ag(111)//Si(111), but the in-plane orientation has a dispersion of ∼ 9° centering at Si[110] direction. Upon annealing, the Ag clusters drastically rotated to the epitaxial configuration with the in-plane orientation aligned to the Ag[110] //Si[110] direction. The rotation and epitaxy of the Ag nanoclusters are explained based on a coincident site lattice model and interface energy minimization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 749: Symposium W – Morphological and Compositional Evolution of Thin Films , 2002 , W2.10
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Brune, H., Surf. Sci. Rep. 31, 121 (1998).Google Scholar
2. Muller, P. and Kern, R., Surf. Sci. 457, 229 (2000).Google Scholar
3. Venables, J.A., Derrien, J., and Janssen, A.P., Surf. Sci. 95, 411 (1980).Google Scholar
4. Zuo, J.K. and Wendelken, J.F., Phys. Rev. B56, 3897 (1997).Google Scholar
5. Oura, K., Lifshits, V.G., Saranin, A.A., and Katayama, M., Surf. Sci. Rep. 35, 1 (1999).Google Scholar
6. Zuo, J.M. and Li, B.Q., Phys. Rev. Lett. 88, 255502 (2002).Google Scholar
7. Shen, T.C., Wang, C., Abeln, G.C., Tucker, J.R., Lyding, J.W., Avouris, Ph., and Walkup, R.E., Science 268, 1590 (1995).Google Scholar
8. Marshall, M.T., McDonald, M.L., Tong, X., Yeadon, M., and Gibson, J.M., Rev. Sci. Instru. 69, 440 (1998).Google Scholar
9. LeGoues, F.K., Liher, M., Renier, M. and Krakow, W., Phil. Mag. B, 57, 179 (1988).Google Scholar
10. Reiss, H., J. Appl. Phys. 39, 5045 (1968).Google Scholar
11. Li, B.Q. and Zuo, J.M., Surf. Sci. 520, 7 (2002).Google Scholar