Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-01T02:44:25.386Z Has data issue: false hasContentIssue false

Multi-Scale Characterization of Pad Role on Material Removal Rate in CMP

Published online by Cambridge University Press:  01 February 2011

Sunil D. Gouda
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011
Ashraf Bastawros
Affiliation:
Dept. of Aerospace Engineering and Mechanics, Iowa State University, Ames, IA 50011
Abhijit Chandra
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011
Get access

Abstract

A combined experimental and theoretical approach has been devised to understand the mechanical behavior of CMP pad. The pad response is examined at different length scale utilizing a nano-indentation with a conical tip and a flat-punch. The experimentally observed trends showed the competition between the local contact field of the abrasive particle and the global porous pad cell deformation. From the experiments, the local particle-level contact, cell bending, long range pad surface asperity contact as well as the bulk response of the pad can be integrated into mechanism-based models for better understanding the applied force partitioning and to predict the characteristics of the material removal rates.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Li, S. H. and Miller, R. O. “Chemical-Mechanical Polishing in Silicon Processing,” Semiconductors and Semimetals, Vol. 63, Academic Press, New York, 2000.Google Scholar
2. Runnels, S. R. and Eyman, L. M.Tribology Analysis of Chemical Mechanical Polishing,” J. Electrochem. Soc., Vol. 141 (No.6), pp.16981701, June, 1994.Google Scholar
3. Steigwald, M.Chemical Mechanical Planarization of Microelectronic Materials,” John Wiley & Sons. New York, pp.6684, 1997.Google Scholar
4. Yu, T. K. Yu, C.C. and Orolowski, M.A statistical polishing pad model for chemicalmechanical polishing, IEEE IEDM Washington DC, Dec. 5-8 (1993) 865868.Google Scholar
5. Fu, Guanghui, Chandra, Abhijit, Guha, Sumit, Subhash, Ghatu, “A Plasticity-Based Model of Material Removal in Chemical-Mechanical Polishing (CMP)”. IEEE Transaction: Semiconductor Manufacturing, Vol. 14, No.4, pp. 406417, 2001.Google Scholar
6. Luo, J. Dornfield, D. A.Material removal mechanism in chemical-mechanical polishing: theory and modeling”, IEEE Trans. Semicond. Manufact., 14 (2). (2001) 112133.Google Scholar
7. Bastawros, A.-F. Chandra, A. Guo, Y. and Yan, B.Pad Effects on Material Removal Rate in Chemical Mechanical Planarization,” J. Electronic Materials, Vol. 31(10), pp. 110, 2002.Google Scholar
8. Gibson, L. J. Ashby, M. F. “Cellular solids structure and properties”, 2nd ed., 1997.Google Scholar
9. Johnson, K. L.Contact Mechanics”, Cambridge University Press, Cambridge, 1999.Google Scholar
10. Boresi, A. P. Sidebottom, O. M.Advanced mechanics of materials”, John Wiley & Sons, New York, pp.479, 1985.Google Scholar
11. Ward, I. M.Mechanical Properties of Solid Polymers,” Wiley, New York, 1983.Google Scholar