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Multiply Scanned Electron Beam Annealing of Si Implanted GaAs

Published online by Cambridge University Press:  15 February 2011

M. Bujatti ,
A. Cetronio ,
R. Nipoti  and
E. Olzi
M. Bujatti
Affiliation:
SELENIA S.p.A., Research Laboratories, Via Tiburtina, 131 ROMA, ITALY.
A. Cetronio
Affiliation:
SELENIA S.p.A., Research Laboratories, Via Tiburtina, 131 ROMA, ITALY.
R. Nipoti
Affiliation:
CNR - Istituto LAMEL, Via Castagnoli, 40126 Bologna, ITALY.
E. Olzi
Affiliation:
CNR - Istituto LTM, Via Induno, 20092 Cinisello Balsamo, ITALY.
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Abstract.

Experimental results obtained by multiply-scanned electron beam annealing (MEBA) of Si implanted semi-insulating GaAs are presented and compared with results obtained by thermal annealing. A tentative model for Cr redistribution during MEBA treatment is presented which can explain the 100% activation without compensation threshold and the high drift mobility obtained for low Si doses, almost independent of the Cr content of the crystal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 695
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES.

1. Shah, N.J., Ahmed, H., Sanders, I.R. and Singleton, J.F., Electronics Letters, 16, 433, (1980).CrossRefGoogle Scholar
2. Bujatti, M., Cetronio, A., Nipoti, R. and Olzi, E., to be published in Appl. Phys. Lett. Google Scholar
3. Bentini, G.G., Galloni, R., and Nipoti, R., Appl. Phys. Lett., 36, 661,(1980).CrossRefGoogle Scholar
4. Feng, M., Kwok, S.P., Eu, V. and Henderson, B.W., J.Appl. Phys., 52, 2990, (1981).Google Scholar
5. Bujatti, M. and Marcelja, F., IEE Proc., Vol. 128, Pt.I, 97,(1981).Google Scholar
6. Pucel, R.A., Krumm, C.F., Electronics Letters, 12, 240, (1976).Google Scholar
7. Sze, S.M., Physics of Semiconductor Devices (John Wiley and Sons, New York 1969), p. 40.Google Scholar
8. Liu, S.G., Douglas, E.C., Wu, C.P., Magee, C.W., Narayan, S.Y., Jolly, S.T., Kolondra, F. and Tain, S., R.C.A. Review 41, 227, (1980).Google Scholar
9. Bujatti, M., Cetronio, A., Cembali, F., Nipoti, R. and Zignani, Z., 10th European Solid State Device Research Conference, York,S26, (1980).Google Scholar
10. SIMS analysis by Evans, Charles and Associates.Google Scholar
11. Magee, T.J., Ormond, R.D., Evans, C.A., Blattner, R.J., Malbon, R.M., Day, D.S. and Sankaran, R., Appl. Phys. Lett., 38, 559, (1981).CrossRefGoogle Scholar