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Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films

Published online by Cambridge University Press:  15 February 2011

H. J. Kim  and
James S. Im
H. J. Kim
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY
James S. Im
Affiliation:
Columbia University, Department of Chemical Engineering, Materials Science and Mining Engineering, New York, NY
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Abstract

We have experimentally Investigated the effects that are associated with Multiple-pulse irradiation in the excimer laser processing of thin Si films on SiO2. Double-pulse irradiation experiments revealed results, which are consistent with that which is known from single-pulse crystallization experiments, and these experiments confirm the applicability of the transformation scenarios, which were derived from single pulse-induced crystallization experiments [1,2]. The results from the Multiple-pulse irradiation experiments clearly show that gradual and substantial grain enlargement can occur — and only occurs — when the irradiation energy density is close to but less than the level that is required to melt the film completely. Based on these findings, we argue that the grain enlargement effect is a near-complete melting phenomenon that is associated with polycrystalline Si films, and we present a grain boundary melting model to account for this phenomenon. A brief discussion on the apparent similarities and physical differences between the observed phenomenon and the solid state grain growth processes is provided herein.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 665
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. Im, J. S., Kim, H. J., and Thompson, M. O., Appl Phys. Lett. 63, 1969 (1993).Google Scholar
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2. Im, J. S. and Kim, H. J., to be published in Appi Phys. Lett (1994).Google Scholar
3. Johnson, R. I., Anderson, G. B., Ready, S. E., and Boyce, J. B., presented at the Spring 1993 Mat. Res. Soc. Symp. and to be published in MRS Symp. Proc.Google Scholar
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