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Multi-mode Mid-IR Silicon Raman Amplifiers

Published online by Cambridge University Press:  01 February 2011

Bahram Jalali ,
Varun Raghunathan  and
Robert R Rice
Bahram Jalali
Affiliation:
jalali@ucla.edu, University of California Los Angeles, Electrical Engineering department, 68-109 E-IV, 420 Westwood Plaza, Los Angeles, CA, 90095-1594, United States
Varun Raghunathan
Affiliation:
varun@ee.ucla.edu, University of California Los Angeles, Electrical Engineering department, 63-128 E-IV, 420 Westwood Plaza, Los Angeles, CA, 90095-1594, United States
Robert R Rice
Affiliation:
bob.rice@ngc.com, Northrop Grumman Space Technology, One Space Park, Redondo Beach, CA, 90278, United States
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Abstract

This paper discusses the prospects of silicon as a Mid-wave Infra-red Raman crystal. As a specific example of novel devices that can be realized, we introduce the concept of multi-mode silicon Raman amplifiers and their application in infrared image pre-amplification. The same technology also has application in incoherent beam combining.

Keywords

Sioptoelectroniclaser
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 958: Symposium L – Group IV Semiconductor Nanostructures—2006 , 2006 , 0958-L11-01
Copyright
Copyright © Materials Research Society 2007

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References

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