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Movpe Growth of GaInP/AlGaInP Heterostructure for Visible Laser

Published online by Cambridge University Press:  21 February 2011

Myeong S. Oh ,
Nam H. Kim ,
Jong W. Lee ,
Jun Y. Kim  and
Tae I. Kim
Myeong S. Oh
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Nam H. Kim
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Jong W. Lee
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Jun Y. Kim
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
Tae I. Kim
Affiliation:
Samsung Advanced Institute of Technology, Materials & Devices Research Center, P.O.Box 111, Suwon, Korea
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Abstract

The GaInP/AlGaInP heterostructure was grown on (100) GaAs substrate using low pressure metal-organic vapor phase epitaxy (LP MOVPE) . The growth temperature and pressure were held constant at 740 °C and 40 torr, respectively. The GalnP multiquantum well layers from 10 Å to 85 A were lattice matched to the substrate. High resolution transmission electron microscopy and low temperature photoluminescence measurements indicated that the GaInP/AlGaInP well layers were uniform in thickness and that the interface was abrupt and free of defects. For high performance of visible laser diodes, highly doped p-AlGaInP layer(8X1017/cm3) was obtained. It was also found that the Zn acceptor concentration increased with growth rate. In this study, the GaInP/AlGaInP laser diode, 645nm and 20mW, was fabricated by employing multiquantum well and highly doped p-cladding layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 365
Copyright
Copyright © Materials Research Society 1994

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References

1 Kishino, K., Kikuchi, A., Kaneko, Y. and Nomura, I., Appl. Phys. Lett., 58, p724–730(1991)Google Scholar
2 Roentgen, P., Heuberger, W., Bona, G.L. and Unger, P., J. Crystal Growth, 107, p724–730(1991)Google Scholar
3 Wang, T.Y., Kimball, A.W., Chen, G.S., Birkedal, D. and Stringfellow, G.B., J. Crystal Growth, 109, p285–291(1991)Google Scholar
4 Valster, A., Liedenbaum, C.T.H.F., Finke, M.N., Severens, A.L.G., Boermans, M.J.B., Vandenhoudt, D.E.W. and Bulle-Lieuwma, C.W.T., J. Crystal Growth, 107, p403–409(1991)Google Scholar
5 Hatakoshi, G., Nitta, K., Itaya, K., Nishikawa, Y., Ishikawa, M. and Okajima, M., Jpn. J. Appl. Phys., 31, p501–507(1992)Google Scholar
6 Hamada, H., Honda, S., Shono, M., Hiroyama, R., Yodoshi, K. and Yamaguchi, T., Electron. Letters, 28, p585–587(1992)Google Scholar
7 Nishikawa, Y., Sugawara, H., Ishikawa, M. and Kokubun, Y., J. Crystal Growth, 108, p728–732(1991)Google Scholar
8 Minagawa, S., Kondow, M., Yanagisawa, H. and Tanaka, T., J. Crystal Growth, 118, p425–429(1992)Google Scholar
9 Ishikawa, M., Suzuki, M., Nishikawa, Y., Itaya, K., Hatakoshi, G., Kokubun, Y. and Uematsu, Y., Inst.Phys.Conf., Ser.No.106, p575–580(1989)Google Scholar