Hostname: page-component-848d4c4894-v5vhk Total loading time: 0 Render date: 2024-07-05T18:43:36.831Z Has data issue: false hasContentIssue false

A Mössbauer Study on Solid Krypton Precipitates in Aluminium and Silicon

Published online by Cambridge University Press:  25 February 2011

M. J. W. Greuter
Affiliation:
Nuclear Solid State Physics, Materials Science Centre, Groningen University, Nijenborgh 4, 9747 AG Groningen, The Netherlands
L. Niesen
Affiliation:
Nuclear Solid State Physics, Materials Science Centre, Groningen University, Nijenborgh 4, 9747 AG Groningen, The Netherlands
A. Van Veen
Affiliation:
Interfacultair Reactor Instituut, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands
Get access

Abstract

Mössbauer spectroscopy on the 9.4 keV transition in 83Kr is used to study inert gases in metals and semiconductors. An absorber was made by implanting 83Kr at 110 keV in Al foils to a total dose of 1.7· 1016 Kr cm−2, leading to the formation of small precipitates (bubbles). Spectra on the as-implanted sample were taken as a function of temperature for three 83RbI sources which differ in line shape due to a different water content. A model is presented to extract the absorber parameters from the spectra in a consistent way, in spite of the different sources used. The spectra of Kr bubbles in Al produced by high dose implantation show two components: a single line from Kr inside the bubble and a quadrupole split component from Kr at the Kr-Al interface. The total absorption area could be fitted very well assuming a simple Debye model, yielding a Debye temperature of ΘDT = 101(2) K. For the individual components we obtained Debye temperatures of ΘDQ = 98(6) K and ΘDS = 90(10) K. The isomer shift of the bulk fraction is significantly larger than that of a solid Kr layer at ambient pressure, reflecting the fact that the s-density increases under compression. The size of the precipitates can be estimated to be 1.5–1.8 nm. Thin KrSi films, produced by Kr plasma sputter deposition, were characterized using cross-sectional X-ray analysis. The results clearly show two different layers. Presumably, the film grows at first as c-Si with a low Kr concentration, but after having reached a certain critical thickness, further growth proceeds as a-Si with a high Kr concentration. For Mössbauer spectroscopy an absorber of 83KrSi was made by plasma deposition on an Al foil. The spectra can be fitted with a single line and a quadrupole component, both with isomer shifts much larger than found in the case of small Kr bubbles in Al. No change in the total absorbed area was observed from 4.2 to 200 K indicating a lower limit of 250 k for the Debye temperature. Both observations indicate that the Kr resides in very small clusters.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Zhang, G. L. and Niesen, L., J. Phys. Condens. Matter 1, 1145 (1989).Google Scholar
2. Greuter, M. J. W., Zhang, G. L. and Niesen, L., in Fundamental Aspects of Inert Gases in Solids, edited by Donnelly, S. E. and Evans, J. H., NATO ASI B 279 (Plenum Press, New York, 1991), p. 231.CrossRefGoogle Scholar
3. Birtcher, R. C. and Jäger, W., Nucl. Instrum. and Methods B15, 435 (1986).CrossRefGoogle Scholar
4. Birtcher, R. C. and Jäger, W., Ultramicroscopy 22, 267 (1987).Google Scholar
5. Hashimoto, I., Yorikawa, H., Mitsuya, H., Yamaguchi, H., Takaishi, K., Kikuchi, T., Furuya, K., Yagi, E. and Iwaki, M., J. Nucl. Mat. 149, 69 (1987).CrossRefGoogle Scholar
6. Greuter, M. J. W. and Niesen, L., to be published.Google Scholar
7. Marquardt, D. W., J. Soc. Ind. Appl Math. 11, 431 (1963).CrossRefGoogle Scholar
8. Pattyn, H., Hendrickx, P. and Bukshpan, S., in Fundamental Aspects of Inert Gases in Solids, edited by Donnelly, S. E. and Evans, J. H., NATO ASI B 279 (Plenum Press, New York, 1991), p. 243.Google Scholar
9. Donnelly, S. E. and Rossouw, C. J., Science 230, 1272 (1985).CrossRefGoogle Scholar
10. Schumacher, R. and Vianden, R., Phys. Rev. B36, 145 (1975).Google Scholar
11. van Veen, A., in Erosion and Growth of Solids stimulated by Atom and Ion Beams, edited by Kiriakidis, G., Carter, G. and Whitton, J. L., NATO ASI E 112 (M. Nijhoff Pubi., Dordrecht, 1986), p. 200.Google Scholar
12. van Veen, A., Greuter, M. J. W., Niesen, L., Nielsen, L. and Lynn, K. G., Proc. MRS Spring Meeting '92, Symp. E, San Fransisco, to be published.Google Scholar
13. Greuter, M. J. W., Niesen, L., Hakvoort, R. A., de Roode, J., van Veen, A., Berntsen, A. J. M. and Sloof, W. G., Proc. HFI Conference '92, Osaka, to be published.Google Scholar
14. Revesz, P., Wittmer, M., Roth, J. and Mayer, J. W., J. Appl Phys. 49, 5199 (1978).CrossRefGoogle Scholar