Hostname: page-component-8448b6f56d-mp689 Total loading time: 0 Render date: 2024-04-25T01:22:14.072Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphological Changes while Growing Nickel Monosilicide Nanowires

Published online by Cambridge University Press:  01 February 2011

Joondong Kim ,
Wayne A. Anderson ,
Elena A. Guliants  and
Christopher E. Bunker
Joondong Kim
Affiliation:
Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo NY 14260
Wayne A. Anderson
Affiliation:
Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo NY 14260
Elena A. Guliants
Affiliation:
Energy & Environmental Science Division, University of Dayton Research Institute, Dayton, OH 45469
Christopher E. Bunker
Affiliation:
Propulsion Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, OH 45433
Get access

Abstract

Nickel monosilicide (NiSi) nanowires (NWs) have been fabricated in a DC magnetron system by the Metal Induced Growth (MIG) method. The NW growing stages were sequentially observed by scanning electron microscopy. Deposited Ni on SiO2 coated Si wafers has been first grooved and agglomerated by thermal heating at 575 °C. In the sputtering procedure, Ni as a catalyst reacted with sputtered Si forming clusters. Nanowires were grown in the same directions on each cluster. Raman spectroscopy and Energy Dispersive Spectroscopy indicated the NW composition as NiSi. The linear propagating property of NWs was used to form self-assembled nanobridges (NBs) in trenched Si wafers. The affinity of NWs can be used on various substrate materials with less thermal damage. NiSi composed MIG-NBs are promising candidates as nanoscale contacts due to the features of low resistivity and low temperature processing giving less potential damage on fabricated structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U5.10
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Liu, Ping, Hsiao, Tommy C., and Woo, Jason C.S., IEEE Trans. Electron Devices. 45, 1280 (1995).Google Scholar
[2] Howell, R. S., Sarcona, G., Saha, S.K., and Hatalis, M. K., J. Vac. Sci. Technol. A 18, 87 (2000).Google Scholar
[3] Decker, C. A., Solanki, R., Freeouf, J. L., Carruthers, J. R., and Evans, D. R., Appl. Phys.Lett. 84, 1389 (2004).Google Scholar
[4] Yan, H. F., Xing, Y. J., Hang, Q. L., Yu, D. P., Wang, Y. P., Xu, J., Xi, Z. H. and Feng, S. Q., Chem. Phys. Lett. 323, 224 (2000).Google Scholar
[5] Wu, Yue, Xiang, Jie, Yang, Chen, Lu, Wei, and Lieber, Charles M., Nature 430, 61 (2004).Google Scholar
[6] Colgan, E. G., Gambino, J. P., Cunningham, B., Mater. Chem. Phys. 46 (1996) 209.Google Scholar
[7] Kim, Hae-Yeol, Kim, Binn, Bae, Jong-Uk, Hwang, Kwang-Jo, and Seo, Hyun-Sik, Appl. Phys. Lett. 81, 5180 (2002).Google Scholar
[8] Kim, Joondong, and Anderson, Wayne A., Thin Solid Films, (In press).Google Scholar
[9] Lee, Kyung Sun, Mo, Young Hwan, Nahm, Kee Suk, Shim, Hyun Wook, Suh, Eun Kyung, Kim, Jae Ryoung, Kim, Ju Jin, Chem. Phys. Lett. 384, 215 (2004).Google Scholar
[10] Kim, Joondong, Ji, Chunhai, and Anderson, Wayne A., Silicon Nanowire Growth at Relatively Low Processing Temperature, San Francisco, U.S.A., April 12–16, 2004, Materials Research Society Symposium Proceeding 818 (2004) M 11. 11.Google Scholar
[11] Ji, Chunhai, Kim, Joondong and Anderson, Wayne A., Study of Photovoltaic Properties and Light Absorption in Poly-Si Thin Film Solar Cell Grown by the Metal-Induced Method, Denver, U.S.A. August 4–6, 2004, SPIE-The International Society for Optical Engineering 5520–39 (2004), 184–191 Google Scholar