Hostname: page-component-76fb5796d-2lccl Total loading time: 0 Render date: 2024-04-26T12:38:41.702Z Has data issue: false hasContentIssue false
  • English
  • Français

Monte Carlo Modelisation of Photoexcited Carriers Relaxation Including Auger Effect in Narrow Band Gap InGaAs

Published online by Cambridge University Press:  31 January 2011

Eric Tea  and
Frederic Aniel
Eric Tea
Affiliation:
eric.tea@u-psud.frerc_t@yahoo.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
Frederic Aniel
Affiliation:
frederic.aniel@u-psud.fr, Institut d'Electronique Fondamentale, UMR 8622 CNRS, Orsay, France
Get access

Abstract

The Auger effect is one of the fastest recombination mechanisms in narrow band gap semiconductors at high carrier concentration. This regime is of great interest for high efficiency hot carrier solar cells application and is also involed in many optical devices. Therefore, the knowledge of this limitting process is required for the determination of carrier lifetime useful to accurate solar cell efficiency calculations. For the first time, we present a carrier lifetime study versus carrier concentration in InGaAs based on a Monte Carlo model where the Auger effect is included as a relaxation mecanism.

Keywords

electronic materialIII-Vphotovoltaic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1230: Symposium MM – Ultrafast Processes in Materials Science , 2009 , 1230-MM06-05
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Chelikowsky, J.R. and Cohen, M.L., Phys. Rev. B14, 556 (1976).Google Scholar
2 Wiley, J.D. Phys. Rev. B4, 2485 (1971).Google Scholar
3 Osman, M.A. and Ferry, D.K. Phys. Rev. B36, 6018 (1987).Google Scholar
4 Vignaud, D. Yarekha, D.A. Lampin, J.F. Zaknoune, M. Godey, S. and Mollot, F. Appl. Phys. Lett. 90, 242104 (2007).Google Scholar
5 Vignaud, D. Lampin, J.F. Lefebvre, E. Zaknoune, M. Godey, S. and Mollot, F. Appl. Phys. Lett. 80, 4151 (2002).Google Scholar
6 Ahrnkiel, R.K. Ellingson, R. Johnston, S. and Wanlass, M. Appl. Phys. Lett. 72, 3470 (1998).Google Scholar